26 results on '"Kurata, Y."'
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2. Structural change of polycrystalline silicon films with different deposition temperature
3. Effects of deposition temperature on polycrystalline silicon films using plasma-enhanced chemical vapor deposition
4. Optical properties of Si clusters and Si nanocrystallites in high-temperature annealed SiO(sub x) films
5. Bonding structure and characteristics of defects of near-stoichiometric silicon nitride films
6. Structure and grain boundary defects of recrystallized silicon films prepared from amorphous silicon deposited using disilane
7. Structure and grain boundary defects of glow-discharge polycrystalline silicon films deposited using disilane
8. Effects of active hydrogen on the stress relaxation of amorphous SiNx:H films
9. Relationship between the stress and bonding properties of amorphous SiNx:H films
10. Phosphorous and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 degrees centigrade
11. Bonding properties of glow-discharge polycrystalline and amorphous Si-C films studied by x-ray diffraction and x-ray photoelectron spectroscopy
12. Relationship between electrical properties and structure in uniaxially oriented polycrystalline silicon films
13. Structural and electric properties of ultrathin SiOxNy layers with posttreatment in N2 plasma.
14. Structure of defects in silicon oxynitride films.
15. Thermal stability and breakdown strength of carbon-doped SiO...: F films prepared by plasma-enhanced chemical vapor deposition method.
16. Structural and electric properties of ultrathin SiO(sub x)N(sub y) layers with posttreatment in N2 plasma
17. Optical properties of Si clusters and Si noncrystallites in high-temperature annealed SiOx films.
18. Phosphorus and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 °C.
19. Effects of in situ plasma supply in undoped and boron-doped polycrystalline silicon by low-pressure chemical vapor deposition at 500–840 °C.
20. Bonding and electrical properties of boron-doped microcrystalline SiNx:H films.
21. Doping effects on conductivity and electron spin resonance in post-hydrogenated polycrystalline silicon.
22. Plasma-hydrogenation effects on conductivity and electron spin resonance in undoped polycrystalline silicon.
23. Crystal structure of Si1-xCx films by plasma-enhanced chemical vapor deposition at 700 °C.
24. Structural and electric properties of ultrathin SiOxNy layers with posttreatment in N2 plasma
25. Crystal structure of Si1−xCxfilms by plasma‐enhanced chemical vapor deposition at 700 °C
26. Effects ofinsituplasma supply in undoped and boron‐doped polycrystalline silicon by low‐pressure chemical vapor deposition at 500–840 °C
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