Phosphorous and nitrogen doping into polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition at 700 degrees centigrade

The effect of phosphorous and nitrogen doping of polycrystalline SiC films prepared by plasma-enhanced chemical vapor deposition was investigated. The results showed that phosphorous and nitrogen doping of the SiC films enhanced the crystallinity of the material. However, high doping conditions resulted in a deterioration in the crystallinity. In addition, resistivity and dangling-bond density decreased as the crystallinity was enhanced.