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Relationship between the stress and bonding properties of amorphous SiNx:H films
- Source :
- Journal of Applied Physics. Dec 15, 1992, Vol. 72 Issue 12, p5676, 6 p.
- Publication Year :
- 1992
-
Abstract
- The correlation between the stress and bonding characteristics of amorphous hydrogenated SiNx thin films deposited on single crystal Si was investigated using a modified random bonding model. The results showed that intrinsic stress was responsible for the measured tensile stress infilms with an N content higher than 1.0. The incorporated NH bonds induced the intrinsic stress to relax.
- Subjects :
- Thin films -- Research
Strains and stresses -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 12
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.13859612