Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method

Authors :: Lubguban, J. Jr.
Kurata, Y.
Inokuma, T.
Hasegawa, S.
Source :: Journal of Applied Physics. April 15, 2000, Vol. 87 Issue 8, p3715, 8 p.
Publication Year :: 2000
Abstract: Plasma-enhanced chemical vapor deposition methods were used for carbon-doped SiO2:F films deposited by changing the CH4 flow rate.

Subjects :: Chemical vapor deposition -- Usage
Thin films -- Research
Physics

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