Back to Search Start Over

Thermal stability and breakdown strength of carbon-doped SiO...: F films prepared by plasma-enhanced chemical vapor deposition method.

Authors :
Lubguban Jr., J.
Kurata, Y.
Source :
Journal of Applied Physics. 4/15/2000, Vol. 87 Issue 8, p3715. 8p. 3 Charts, 9 Graphs.
Publication Year :
2000

Abstract

Deals with a study which investigated the electrical and structural properties for the fluorinated silicon oxide (SiO...:F):carbon films in comparison with those for the undoped SiO...:F films. Experimental procedure; Results and discussion.

Subjects

Subjects :
*ELECTRIC properties of silicon
*CARBON
*ELECTRONICS

Details

Language :
English
ISSN :
00218979
Volume :
87
Issue :
8
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
3183346
Full Text :
https://doi.org/10.1063/1.372406
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details