Structure and grain boundary defects of recrystallized silicon films prepared from amorphous silicon deposited using disilane

Undoped amorphous-Si (a-Si) films are deposited as a function of deposition temperature on fused quartz substrates by low pressure chemical vapor deposition using 100% disilane. The texture of these poly a-Si films is significantly influenced by the deposition temperature of the initial films which serve as the substrates. The films grown below a temperature of 530 degrees Celsius exhibit a dominant (100) texture and beyond this temperature, a (111) texture. A decrease in deposition temperature results in a reduction of the nucleation rate.