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Structural change of polycrystalline silicon films with different deposition temperature

Authors :
Hasegawa, S.
Sakata, M.
Inokuma, T.
Kurata, Y.
Source :
Journal of Applied Physics. April 1, 1999, Vol. 85 Issue 7, p3844, 5 p.
Publication Year :
1999

Abstract

A study was conducted to analyze structural changes of polycrystalline silicon films support different deposition temperature. The role of deposition temperature and surface structure of substrates on the growth mechanism and structural characteristics of the films were examined. Results indicated that crystalline at a lower deposition temperature correlated with the surface morphology of the substrates.

Details

ISSN :
00218979
Volume :
85
Issue :
7
Database :
Gale General OneFile
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
edsgcl.54423386