34 results on '"Cavallini, A."'
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2. Deep levels by proton and electron irradiation in 4H-SiC
3. Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications
4. Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy.
5. Ge clustering effects in Ge doped CdTe: Electrical and structural properties.
6. Defect states in nc-Si:H films investigated by surface photovoltage spectroscopy.
7. Effects of single-layer Shockley stacking faults on the transport properties of high-purity semi-insulating 4H–SiC.
8. X-ray irradiation effects on the trapping properties of Cd1-xZnxTe detectors.
9. Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization.
10. A model for the thermal degradation of metal/(p-GaN) interface in GaN-based light emitting diodes.
11. Surface photovoltage spectroscopy analyses of Cd1-xZnxTe.
12. Defect characterization in GaN: Possible influence of dislocations in the yellow-band features.
13. Optoelectronic properties of GaN epilayers in the region of yellow luminescence.
14. Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC.
15. Defect assessment of Mg-doped GaN by beam injection techniques.
16. Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors.
17. Defective states induced in CdTe and CdZnTe detectors by high and low energy neutron irradiation.
18. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN.
19. Optical properties of oxygen precipitates and dislocations in silicon.
20. Double-junction effect in proton-irradiated silicon diodes.
21. Surface photovoltage spectroscopy analyses of [Cd.sub.1-x][Zn.sub.x]Te
22. Optoelectronic properties of GaN epilayers in the region of yellow luminescence
23. Electrical and optical characterization of Er-doped silicon grown by liquid epitaxy.
24. Time-resolved cathodoluminescence and photocurrent study of the yellow band in Si-doped GaN
25. Deep energy levels in CdTe and CdZnTe.
26. The EL2 trap in highly doped GaAs:Te.
27. Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level.
28. Role of impurities on diffusion-induced defective states.
29. Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments.
30. Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles.
31. Erratum: "Preface and acknowledgements" [J. Appl. Phys. 115, 011901 (2014)].
32. Preface and Acknowledgments.
33. Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies.
34. Defects introduced in cadmium telluride by γ irradiation.
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