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Determination of minority-carrier diffusion length by integral properties of electron-beam-induced current profiles.

Authors :
Cavalcoli, D.
Cavallini, A.
Castaldini, A.
Source :
Journal of Applied Physics. 8/15/1991, Vol. 70 Issue 4, p2163. 6p.
Publication Year :
1991

Abstract

Presents a study which obtained the diffusion length of minority in n-type floating-zone silicon samples with the electron-beam-induced current technique in planar configuration. Background on the moment method; Experimental procedures; Results of the study.

Subjects

Subjects :
*DIFFUSION
*SILICON
*CONFIGURATIONS (Geometry)

Details

Language :
English
ISSN :
00218979
Volume :
70
Issue :
4
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7626721
Full Text :
https://doi.org/10.1063/1.349454
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