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Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC.
- Source :
-
Journal of Applied Physics . 2/1/2006, Vol. 99 Issue 3, p033701. 4p. 1 Chart, 4 Graphs. - Publication Year :
- 2006
-
Abstract
- The effects of low-temperature annealing in 8.2 MeV electron-irradiated 4H-SiC Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length (Ld) measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to T=450 °C. We found that several deep levels in the upper half band gap (S1 with enthalpy ET=0.27 eV, S2 with ET=0.35 eV, S4 with ET=0.71 eV, and S5 with ET=0.96 eV) anneal out or modify at temperature values lower or equal to T=450 °C, whereby their progressive annealing out is accompanied by a net increase of Ld, up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 99
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 19791334
- Full Text :
- https://doi.org/10.1063/1.2160708