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Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments.
- Source :
-
Journal of Applied Physics . 6/15/1992, Vol. 71 Issue 12, p5964. 5p. 1 Diagram, 2 Charts, 5 Graphs. - Publication Year :
- 1992
-
Abstract
- Presents information on a study that determined the diffusion length and surface recombination velocity of the minority carriers from electron beam induced current profiles on a semiconductor containing a barrier perpendicular to the scanned surface. Methodology of the study; Results and discussion on the study.
- Subjects :
- *SEMICONDUCTOR diffusion
*ELECTRON beams
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 71
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7633561
- Full Text :
- https://doi.org/10.1063/1.350447