Double-junction effect in proton-irradiated silicon diodes.

This article concerns the existence of a double-junction effect in proton-irradiated silicon p[sup +] υ-n[sup +] (pin) diodes demonstrated by surface potential and optical-beam-induced current (OBIC) investigations. By increasing the diode biasing, the junctions existing at both ends in the irradiated devices move towards each other up to join, hence, causing a full depletion of the diodes. Due to the inhomogeneity of the electric field, however, the charge-carrier collection is strongly dependent on the position. The extent of the diode depletion layers at both ends and the shape of the electric field within the p[sup +]-υ-n[sup +] diodes are determined as a function of the bias applied. Three-dimensional photocurrent maps obtained by OBIC profiles allow for imaging the double junction. The deep level analysis evidences the presence of irradiation-induced defects, which are responsible for the double-junction effect. [ABSTRACT FROM AUTHOR]