Role of impurities on diffusion-induced defective states.

Authors :: Castaldini, A.
Cavallini, A.
Fraboni, B.
Giannotte, E.
Source :: Journal of Applied Physics. 12/15/1992, Vol. 72 Issue 12, p5622. 6p. 5 Black and White Photographs, 2 Diagrams, 2 Charts.
Publication Year :: 1992
Abstract: Investigates the defective states induced in floating zone silicon by the heavy diffusion of dopants by means of the electron beam-induced current (EBIC) method. Evolution of the electrical and morphological properties of the induced defects; Role of aluminum in the electrical activity of bulk defective states; Sample mounting geometries utilized for EBIC analyses.