Back to Search Start Over

The EL2 trap in highly doped GaAs:Te.

Authors :
Castaldini, A.
Cavallini, A.
Fraboni, B.
Piqueras, J.
Source :
Journal of Applied Physics. 12/1/1995, Vol. 78 Issue 11, p6592. 4p.
Publication Year :
1995

Abstract

Presents a study that investigated the EL2 trap in highly doped gallium arsenide:tellurium. Method of the study; Results and discussion; Conclusion.

Subjects

Subjects :
*DOPED semiconductors
*GALLIUM arsenide
*TELLURIUM

Details

Language :
English
ISSN :
00218979
Volume :
78
Issue :
11
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7658765
Full Text :
https://doi.org/10.1063/1.360480
Full Text Access
View/download PDF

Tools

Authors Abstract Subjects Details