Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level.

Authors :: Castaldini, A.
Cavallini, A.
Fraboni, B.
Mendez, B.
Piqueras, J.
Source :: Journal of Applied Physics. 7/15/1994, Vol. 76 Issue 2, p987. 6p. 6 Black and White Photographs, 3 Diagrams, 9 Graphs.
Publication Year :: 1994
Abstract: Presents a study which investigated the distribution in liquid-encapsulated-Czochralski GaAs:Te wafers of point and complex defects together with their influence on the minority-carrier diffusion length. Characteristics of the wafers of liquid-encapsulated-Czochralski gallium arsenide tellurium doped; Methods used; Results of the study.

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