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4. Formation of shallow p(super +)n junctions by BF(sub 2)(super +) implantation into thin polycrystalline Si films

5. Activation mechanism of implanted boron in a Si substrate

6. Influence of implant condition on the transient-enhanced diffusion of ion-implanted boron in silicon

7. Thin cobalt films

8. Thin titanium films

12. Shallow junctions formed by BF(sub 2)(super +) implantation into thin CoSi films and rapid thermal annealing

17. Suppression of anomalous diffusion of ion-implanted boron in silicon by laser processing

43. Formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films

46. Formation of p[sup +]n junctions by Si[sup +]+B[sup +] implantation and laser annealing.

47. Novel annealing scheme for fabricating high-quality Ti-silicided shallow n[sup +]p junction by....

48. The process limitation for forming Ti silicided shallow junction by BF[sup +, sub 2]....

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