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Implanting of positively charged BF(2) ions into polycrystalline thin Si films with annealing produces high quality shallow p(+)n junctions. The leakage is 1 nanoamperes per square centimeter and a junction depth of 0.05 micrometers occurs in the samples after annealing the samples at 800 degrees Celsius. Characterization of the implantation and annealing process enables the determination of the effects on resultant junctions. Poor characteristics are exhibited by the samples with high energy implantations since the Si substrates are severely damaged.

The recrystallization and dopant activation mechanisms of implanted boron in an Si substrate was investigated. The results showed that an increase in the heating rate resulted in decreased effective activation enrgy and critical temperature values. The pre-exponential term sharply decreased at low rates due to the shorter effective annealing time when the heating rate was increased.

The implant condition is found to be important for reducing transient-enhanced diffusion of boron in silicon under high-dosage boron implantation. There is shallow p+n junction formation with good rectifying characteristics and high dopant concentration in the diffused region. The boron-implanted crystalline samples manifested poor activation efficiency and large anomalous diffusion at high temperature with prolonged-time annealing. Severely transient-enhanced diffusion occurred despite good dopant activation.

A study was done on the effects of rapid thermal annealing (RTA) on the formation of p+n junctions by observing the formation of BF+2 ions into thin Co films followed by silicidation. Results show junction formation by various implant conditions andis attributed to dopant drive-in efficiency, defects in junctions and junction depth under different anneal conditions. Conventional furnace annealing (CTA) improved drive-in efficiency while RTA was found to be better than CTA in annihilating damage, activating dopant and forming shallow junctions.

Rapid thermal annealing (RTA) and conventional furnace annealing (CFA) methods were used to fabricate high-quality Ti-silicided shallow p+n junctions. Annealing temperatures higher than 800 degrees centigrade degrade junction formation because of more severe dopant confinement within the silicides and more seriousknock-on Ti into junction regions. RTA caused an immediate formation of Ti-B compounds at high temperatures while CFA promoted drive-in efficiency because of its low heating rates and long annealing times.

Rapid thermal annealing (RTA) and conventional furnace annealing (CFA) implant BF(sub 2)(super +) into thin CoSi films on Si substrates to produce Co-silicided shallow P(super +)n junctions. Implantation of dopant ions through metal silicide layer (ITS) requires lower annealing temperatures. RTA process yields poor junctions in ITS schemes.

Laser annealing suppression of anomalous diffusion of ion-implanted boron in silicon was investigated. The results showed that the high-dosage boron implant greatly enhanced the anomalous diffusion of boron in Si. The heating process was observed to be the primary determinant of doping activation. Better dopant activation efficiency resulted in high-performance shallow junctions. Laser processing proved to be an effective method of retarding anomalous diffusion and facilitating dopant activation.

Abstract: Formation of Mo gate electrode with adjustable work function on thin Ta2O5 high-k dielectric films at low-temperature processing of 600°C has been studied by using nitrogen implantation into the Mo gate electrode. For the sample without nitrogen implantation, a work function of about 4.85V can be achieved for p-FET. By employing the nitrogen implantation into the Mo gate electrode, a work function of about 4.45V can be achieved for n-FET. Though larger nitrogen implantation energy can lead to even lower work function as 4.25V, much larger capacitor leakage is caused and capacitance value is considerably degraded, attributable to the penetration of nitrogen into Ta2O5 dielectrics. As a result, proper nitrogen implantation energy should be employed to make trade-off of capacitance value, capacitor leakage, and work function, for high-performance nanometer CMOS IC technology. [Copyright &y& Elsevier]

Investigates the formation of p[sub +]n junctions by ion implantation and laser annealing. Presentation of the implants and anneal regimes; Effect of rapid thermal annealing on boron implanted silicon pre-amorphized samples; Role of laser annealing in dopant activation and anomalous diffusion suppression.

Describes the fabrication of titanium (Ti)-silicided shallow n[sup +]p junction by phosphorus ion implantation in amorphous-silicon/Ti bilayer thin film. Application of rapid thermal annealing with post-conventional furnace annealing treatment; Facilitation of silicidation and damage annihilation; Crystallization of titanium silicide.

Details the formation of shallow p[sup +]n junctions by implanting BF[sup +][sub 2] ions into thin polycrystalline silicon films and subsequent annealing. Occurrence of an anomalous boron diffusion; Effect of silicidation on the junction profile; Factor attributed for the large boron redistribution.