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Activation mechanism of implanted boron in a Si substrate
- Source :
- Journal of Applied Physics. Dec 1, 1992, Vol. 72 Issue 11, p5190, 5 p.
- Publication Year :
- 1992
-
Abstract
- The recrystallization and dopant activation mechanisms of implanted boron in an Si substrate was investigated. The results showed that an increase in the heating rate resulted in decreased effective activation enrgy and critical temperature values. The pre-exponential term sharply decreased at low rates due to the shorter effective annealing time when the heating rate was increased.
- Subjects :
- Boron -- Research
Silicon -- Research
Annealing -- Research
Physics
Subjects
Details
- ISSN :
- 00218979
- Volume :
- 72
- Issue :
- 11
- Database :
- Gale General OneFile
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- edsgcl.14267446