Suppression of anomalous diffusion of ion-implanted boron in silicon by laser processing

Laser annealing suppression of anomalous diffusion of ion-implanted boron in silicon was investigated. The results showed that the high-dosage boron implant greatly enhanced the anomalous diffusion of boron in Si. The heating process was observed to be the primary determinant of doping activation. Better dopant activation efficiency resulted in high-performance shallow junctions. Laser processing proved to be an effective method of retarding anomalous diffusion and facilitating dopant activation.