Thin titanium films

Rapid thermal annealing (RTA) and conventional furnace annealing (CFA) methods were used to fabricate high-quality Ti-silicided shallow p+n junctions. Annealing temperatures higher than 800 degrees centigrade degrade junction formation because of more severe dopant confinement within the silicides and more seriousknock-on Ti into junction regions. RTA caused an immediate formation of Ti-B compounds at high temperatures while CFA promoted drive-in efficiency because of its low heating rates and long annealing times.