1. Correlation of ZnO orientation to band alignment in p-Mg0.2Ni0.8O/n-ZnO interfaces.
- Author
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Zhou, T. T., Lu, B., Wu, C. J., Ye, Z. Z., Lu, J. G., and Pan, X. H.
- Subjects
ZINC oxide ,VALENCE bands ,HETEROJUNCTIONS ,HETEROSTRUCTURES ,X-ray photoelectron spectroscopy - Abstract
We have investigated the influence of ZnO orientation on the valence band offset (ΔE
V ) of Mg0.2Ni0.8O(111)/ZnO (112 0) and Mg0.2Ni0.8O(111)/ZnO(0002) heterostructures by x-ray photoelectron spectroscopy. Combining with the experimental optical energy band gap extracted from UV-vis transmittance spectra, the energy band alignment at the interfaces has been determined. The ΔEV has been found to be 1.8 ± 0.1 eV and 1.4 ± 0.1 eV for Mg0.2Ni0.8O(111)/ZnO (112 0) and Mg0.2Ni0.8O(111)/ZnO(0002), respectively. Both the heterostructures show type-II band configurations with conduction band offsets (ΔEC ) of 2.4 ± 0.1 eV and 2.0 ± 0.1 eV, respectively. The ZnO orientation correlated electronic structure in p-Mg0.2Ni0.8O/n-ZnO interfaces can be explained well by the effect of spontaneous polarization in ZnO. Furthermore, the results offer opportunity that desired band offsets in MgxNi1-xO/ZnO heterostructures can be obtained by appropriately adjusting Mg composition. [ABSTRACT FROM AUTHOR]- Published
- 2013
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