ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers.

Authors :: Ye, Z. Z.
Lu, J. G.
Zhang, Y. Z.
Zeng, Y. J.
Chen, L. L.
Zhuge, F.
Yuan, G. D.
He, H. P.
Zhu, L. P.
Huang, J. Y.
Zhao, B. H.
Source :: Applied Physics Letters. 9/10/2007, Vol. 91 Issue 11, p113503. 3p. 1 Diagram, 3 Graphs.
Publication Year :: 2007
Abstract: ZnO homojunction light-emitting diodes (LEDs), comprised of N–Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer. [ABSTRACT FROM AUTHOR]