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ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers.
- Source :
-
Applied Physics Letters . 9/10/2007, Vol. 91 Issue 11, p113503. 3p. 1 Diagram, 3 Graphs. - Publication Year :
- 2007
-
Abstract
- ZnO homojunction light-emitting diodes (LEDs), comprised of N–Al codoped p-type ZnO and Al-doped n-type ZnO layers, were fabricated on Si substrates with homobuffer layers. The current-voltage measurements showed typical diode characteristic with a threshold voltage of about 3.3 V. The electroluminescence (EL) bands at 110 K consisted of a near-band-edge emission at 3.18 eV and a deep level emission at 2.58 eV. The EL emissions were assigned as radiative recombinations, presumably of donor-acceptor pairs, in the p-type layer of the LED. The quenching of EL with temperature was attributed to the degradation of p-type conducting of the ZnO:(N,Al) layer. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ZINC oxide
*LIGHT emitting diodes
*DIODES
*SILICON
*ELECTROLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 91
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27622217
- Full Text :
- https://doi.org/10.1063/1.2783262