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p-type conduction in N–Al co-doped ZnO thin films.
- Source :
-
Applied Physics Letters . 10/11/2004, Vol. 85 Issue 15, p3134-3135. 2p. 1 Chart, 4 Graphs. - Publication Year :
- 2004
-
Abstract
- p-type ZnO thin films have been realized by the N–Al co-doping method. Secondary ion mass spectroscopy demonstrated that the N incorporation was enhanced evidently by the presence of Al in ZnO. The lowest room-temperature resistivity was found to be 57.3 Ω cm with a Hall mobility of 0.43 cm2/V s and carrier concentration of 2.25×1017 cm-3 for the N–Al co-doped p-type ZnO film deposited on glass substrate. The results were much better than those for the N-doped p-type ZnO. Moreover, the co-doped film possesses a good crystallinity with c-axis orientation and a high transmittance (90%) in the visible region. [ABSTRACT FROM AUTHOR]
- Subjects :
- *THIN films
*ZINC oxide
*SEMICONDUCTOR doping
*MASS spectrometry
*SPECTRUM analysis
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 15
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14909490
- Full Text :
- https://doi.org/10.1063/1.1803935