ZnO quantum dots synthesized by a vapor phase transport process.

Authors :: Lu, J. G.
Ye, Z. Z.
Huang, J. Y.
Zhu, L. P.
Zhao, B. H.
Wang, Z. L.
Fujita, Sz.
Source :: Applied Physics Letters. 2/6/2006, Vol. 88 Issue 6, p063110. 3p. 2 Black and White Photographs, 1 Diagram, 5 Graphs.
Publication Year :: 2006
Abstract: A vapor phase transport growth process has been developed to synthesize ZnO quantum dots (QDs) on Si substrates. The characteristics were investigated for as-prepared ZnO QDs without any additional treatment. The formation of ZnO QDs with 6 nm in height and 15 nm in diameter is confirmed by scanning electron microscope and atomic force microscopy. Room-temperature photoluminescence reveals that the as-prepared ZnO QDs exhibit a predominant ultraviolet emission at 3.32 eV while the low energy defect-related blue-green emission is significantly quenched. The band gap of ZnO QDs is determined to be 3.41 eV, which evidently indicates the quantum confinement effects. [ABSTRACT FROM AUTHOR]