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In situ observation of structure and electrical property changes of a Ga-doped ZnO/graphene flexible transparent electrode during deformation.

Authors :
Zhang, L. Q.
Gao, Z. F.
Tu, Z. Q.
Liu, C.
Qi, Y.
Yang, F.
Yang, W.
Jiang, D. Q.
Guo, Y. P.
Ye, Z. Z.
Lu, J. G.
Hou, X. Y.
Li, Y. F.
Cui, L. S.
Source :
Applied Physics Letters; 6/2/2014, Vol. 104 Issue 22, p1-4, 4p, 1 Diagram, 3 Graphs
Publication Year :
2014

Abstract

Ga-doped ZnO (GZO)/graphene multilayer film was fabricated on the polyethylene terephthalate substrate at room temperature. The obtained GZO/graphene multilayer showed a transparence of 75% at 550nm and a sheet resistance of 721Ω/sq. Our findings indicate that the graphene intermediate layer plays a critical role in improving the conductivities of GZO. Under a tensile strain, the sheet resistance of the GZO electrode without graphene exhibited a sharp increase owing to the plenty of cracks formed in the GZO layer. In contrast, the GZO/graphene multilayer displayed a relatively stable and low resistance during the tensile deformation due to the excellent mechanical and electrical stabilities of the graphene. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
104
Issue :
22
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
96394041
Full Text :
https://doi.org/10.1063/1.4881336