Back to Search
Start Over
Electrical characterization of ZnO-based homojunctions.
- Source :
-
Applied Physics Letters . 7/31/2006, Vol. 89 Issue 5, p053501. 3p. 1 Chart, 4 Graphs. - Publication Year :
- 2006
-
Abstract
- Electrical characteristics have been studied for ZnO p-n and p-i-n homojunctions, with optimization of device structures for improved performance. Capacitance-voltage measurements confirm the formation of abrupt junctions. The current-voltage characteristics exhibit their inherent electrical rectification behavior. The p-ZnO:(N,Al)/n-ZnO:Al homojunctions fabricated on sapphire substrates combining with the intrinsic ZnO buffer layer have acceptable p-n diode characteristics, with the forward turn-on voltage of 1.4 V and the reverse breakdown voltage of 5.3 V. By introduction of an intrinsic (Zn,Cd)O layer, the resultant p-ZnO:(N,Al)/i-(Zn,Cd)O/n-ZnO:Al homojunction exhibits a high reverse breakdown voltage of ∼18 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21970767
- Full Text :
- https://doi.org/10.1063/1.2245221