127 results on '"Heera, V."'
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2. The influence of iron, fluorine and boron implantation on the magnetic properties of graphite
3. A comparison of the magnetic properties of proton- and iron-implanted graphite
4. Study of crystal damage by ion implantation using micro RBS/channeling
5. Phase formation due to high dose aluminum implantation into silicon carbide
6. Crystallization and surface erosion of SIC by ion irradiation at elevated temperatures
7. Annealing and recrystallization of amorphous silicon carbide produced by ion implantation
8. In situ laser reflectometry study of the amorphization of silicon carbide by MeV ion implantation
9. Kinetics of ion-beam-induced interfacial amorphization in silicon
10. Ion-beam synthesis of amorphous SiC films: structural analysis and recrystallization
11. SiC precipitates formed in Si by simultaneous dual beam implantation of C + and Si + ions
12. Annealing studies of Al-implanted 6H-SiC in an induction furnace
13. DESIGN AND IMPLEMENTATION OF DIGITAL SIGNAGE SYSTEM USING IoT.
14. High-fluence Ga-implanted silicon—The effect of annealing and cover layers.
15. The beneficial role of flash lamp annealing on the epitaxial growth of the 3C–SiC on Si
16. Focused ion beam sputtering investigations on SiC
17. p-Type doping of SiC by high dose Al implantation—problems and progress
18. Investigation of Al-implanted 6H– and 4H–SiC layers after fast heating rate annealings
19. Spreading resistance measurements on nanocrystalline SiC produced by ion beam induced crystallisation
20. Heavily Ga-doped germanium layers produced by ion implantation and flash lamp annealing: Structure and electrical activation.
21. A comparative study of the electrical properties of heavily Al implanted, single crystalline and nanocrystalline SiC.
22. High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation.
23. n-type conductivity in high-fluence Si-implanted diamond.
24. Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC.
25. High-fluence Si-implanted diamond: Formation of SiC nanocrystals and sheet resistance.
26. Crystallization and surface erosion of SiC by ion irradiation at 500°C
27. Annealing and recrystallization of amorphous silicon carbide produced by ion implantation
28. Amorphization and recrystallization of 6H-SiC by ion-beam irradiation.
29. Large magnetoresistance of insulating silicon films with superconducting nanoprecipitates.
30. Icosahedral quasicrystals of Al-Fe phase formed by ion-beam mixing
31. Comment on 'Evidence of enhanced epitaxial crystallization at low temperature by inelastic electronic scattering of mega-electron-volt heavy-ion-beam irradiation' (J. Appl. Phys. 79, 682 (1996))
32. Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates - superconductorto- metal or vortex matter phase transition?
33. Advances in Si & Ge millisecond processing: From silicon-on-insulator to superconducting Ge.
34. Depth-resolved transport measurements and atom-probe tomography of heterogeneous, superconducting Ge:Ga films.
35. Silicon films with gallium-rich nanoinclusions: from superconductor to insulator.
36. Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors.
37. Superconducting Ga-overdoped Ge layers capped with SÍO2: Structural and transport investigations.
38. The impact of heavy Ga doping on superconductivity in germanium.
39. Superconducting films fabricated by high-fluence Ga implantation in Si.
40. Absence of superconductivity in boron-implanted diamond
41. P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation.
42. Diamond formation by carbon implantation into cubic silicon carbide
43. Ion beam synthesis of diamond-SiC-heterostructures
44. Nanocrystalline SiC layers produced by ion-beam-induced crystallization—morphology and resistivity
45. On the Calculation of the Multiplicities of Quasicrystal Diffraction Spots.
46. Some Remarks on Indexing of Quasicrystal Diffraction Spots.
47. On the Electronic Structure of Palladium-Hydrogen and Platinum-Hydrogen Systems.
48. Semirelativistic SCF-SW-Xα Calculations of uranium compounds. Charge density differences at the uranium nucleus.
49. Semirelativistic SCF-SW-X α Calculations of Uranium Compounds. Electronic Structure and Chemical Bond.
50. Polarized TiKβ Valence Band Spectra of TiO2 (Rutile).
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