Crystallization and surface erosion of SIC by ion irradiation at elevated temperatures

The influence of high dose ion irradiation through amorphous surface layers in single crystalline 6H-SiC at elevated temperatures was analyzed. Quantification for irradiation at 500 degrees Celsius was conduced on material swelling, subsequent densification and surface erosion. Ion beam induced recrystallization was examined in the temperature range from 300-1300 degrees Celsius. The findings indicate that perfect epitaxial regrowth in (0001)-oriented 6H-SiC cannot be achieved by ion irradiation at elevated temperatures.