Kinetics of ion-beam-induced interfacial amorphization in silicon

A study was conducted on the kinetics of ion-beam-induced interfacial amorphization (IBIIA) in silicon. This process is different from bulk amorphization in terms of the critical energy density approach and the evolution of the roughness of the amorphous/crystalline interface during ion irradiation. The findings indicate that the temperature dependence of IBIIA can be characterized by three regimes: athermal ion-beam-induced defect generation, thermally activated recombination of defects and athermal transport of defects towards the amorphous/crystalline interface.