Annealing and recrystallization of amorphous silicon carbide produced by ion implantation

Step height measurements, optical microscopy and x-ray diffraction analysis were use to systematically examine the annealing behavior of amorphous silicon carbide (SiC) layers created by the implantation of Si MeV into 6H-SiC. The findings revealed two annealing stages. The first stage is between 200 degrees and 700 degrees centigrade, at which period the amorphous layer densificates after five minutes. The second stage is at temperatures beyond 700 degrees centigrade and is characterized by the combined defect annealing and recrystallization.