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Amorphization and recrystallization of 6H-SiC by ion-beam irradiation.
- Source :
-
Journal of Applied Physics . 4/1/1995, Vol. 77 Issue 7, p2999. 11p. 8 Black and White Photographs, 2 Charts, 8 Graphs. - Publication Year :
- 1995
-
Abstract
- Focuses on a study which examined amorphization of 6H-SiC with germanium ions at room temperature and subsequent ion-beam-induced epitaxial crystallization (IBIEC) with silicon ions. Significance of SiC to the semiconductor industry; Experimental results; Results and discussion.
- Subjects :
- *SILICON carbide
*GERMANIUM
*ION bombardment
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7658383
- Full Text :
- https://doi.org/10.1063/1.358649