1. Phase-separation suppression in GaN-rich side of GaNP alloys grown by metal-organic chemical vapor deposition.
- Author
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Chen, D.J., Shen, B., Bi, Z.X., Zhang, K.X., Gu, S.I., Zhang, R., Shi, Y., Zheng, Y.D., Sun, X.H., Wan, S.K., and Wang, Z.G.
- Subjects
TERNARY alloys ,VAPOR-plating ,CHEMICAL systems ,CHEMICAL vapor deposition ,SPECTRUM analysis ,DOPPLER effect - Abstract
The GaN-rich side of GaNP ternary alloys has been successfully synthesized by light-radiation heating and low-pressure metal-organic chemical vapor deposition. X-ray diffraction (XRD) rocking curves show that the (0002) peak of GaNP shifts to a smaller angle with increasing P content. From the GaNP photoluminescence (PL) spectra, the red shifts from the band-edge emission of GaN are determined to he 73, 78 and 100 meV, respectively, in the GaNP alloys with the P contents of 1.5%, 5.5% and 7.5%. No PL peak or XRD peak related to GaP is observed, indicating that phase separation induced by the short-range distribution of GaP-rich regions in the GaNP layer has been effectively suppressed. The phase-separation suppression in the GaNP layer is associated with the high growth rate and the quick cooling rate under the given growth conditions, which can efficiently restrain the accumulation of P atoms in the GaNP layer. [ABSTRACT FROM AUTHOR]
- Published
- 2005
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