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The formation of SiCN film on Si substrate by constant-source diffusion.
- Source :
-
Thin Solid Films . Nov2017, Vol. 642, p124-128. 5p. - Publication Year :
- 2017
-
Abstract
- The SiCN film, which has the same crystal structure as 3C-SiC verified by X-ray diffraction and Raman scattering, has been formed on Si (111) substrate by constant-source diffusion using a chemical vapor deposition system. Via X-ray photoelectron spectroscopy, the film has been identified as the mixture of elemental Si and SiC 1 − x N x alloy, with the SiC 1 − x N x content decreases from 87.4% to 17.9% and the mole fraction x increases from 0.17 to 0.21, as the depth extends from the near surface to the interface. The measured composition distribution can be well explained by the constant-source diffusion model, confirms that the formation mechanism of the SiCN film is the diffusion of C and N into the Si substrate. This provides a new method for fabricating crystalline SiCN thin films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 642
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 125781796
- Full Text :
- https://doi.org/10.1016/j.tsf.2017.09.034