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High reflectivity AlGaN/AlN DBR mirrors grown by MOCVD
- Source :
-
Journal of Crystal Growth . Jan2007, Vol. 298, p691-694. 4p. - Publication Year :
- 2007
-
Abstract
- Abstract: High reflectivity (>93.5%) distributed Bragg reflectors (DBRs) have been successfully produced using the AlGaN/AlN multilayer stacks materials system by metal-organic chemical vapor deposition (MOCVD). The peak reflectance of the DBRs was located at 320nm. The nominal Al composition is 30%, and the layer thicknesses of the different periods stack were designed for a target wavelength of 330nm. We present reflectivity, SEM, AFM and XRD data of Al x Ga1− x N/AlN Bragg reflectors grown on (0001)-oriented sapphire. The surface of the AlN/AlGaN DBRs was found to grow in quasi-two-dimensional (2D) mode, which was indicated by the atomic force microscopy (AFM). The DBR has very smooth surface and the interface was distinct. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 298
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 23824006
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2006.10.216