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GaN1−xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition
- Source :
-
Journal of Crystal Growth . Jul2003, Vol. 255 Issue 1/2, p52. 5p. - Publication Year :
- 2003
-
Abstract
- GaN1−xPx ternary alloys with high P compositions were deposited on sapphire substrates by means of metal-organic chemical vapor deposition. Depth profiles of the elements indicate that the maximum P/N composition ratio is about 17% and a uniform distribution of the P atoms in the alloys is achieved. <f>2θ/ω</f> XRD spectra demonstrate that the (0 0 0 2) peak of the GaN1−xPx alloys shifts to smaller angle with increasing P composition. From the photoluminescence (PL) spectra, the red shifts to the bandedge emission of GaN are determined to be 73, 78, 100 and 87 meV for the GaN1−xPx alloys with the P/N composition ratios of 3%, 11%, 15% and 17%, respectively. No PL peak related to GaP is observed, indicating that the phase separation between GaN and GaP is well suppressed in our GaN1−xPx samples. [Copyright &y& Elsevier]
- Subjects :
- *GALLIUM nitride
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 255
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 9991452
- Full Text :
- https://doi.org/10.1016/S0022-0248(03)01200-4