Influence of growth conditions on the incorporation of substitutional C in Si[sub 1-x-y] Ge[sub x] C[sub y] alloy on Si by chemical vapor deposition using C[sub 2] H[sub 4].

Abstract. Thin heteroepitaxial films of Si[sub 1-x-y]Ge[sub x]C[sub y] have been grown on Si(100) substrates by rapid thermal chemical vapor deposition (RTCVD) using C[sub 2]H[sub 4] as C source. The composition and microstructure of Si[sub 1-x-y]Ge[sub x]C[sub y] films were characterized by Auger electron spectroscopy, Raman spectra and Fourier-transform infrared spectroscopy. The results show that lower temperature and higher SiH[sub 4]/C[sub 2]H[sub 4] flow ratio are helpful in forming the substitutional C and improving the crystal quality. A possible mechanism for C incorporation in Si[sub 1-x-y]Ge[sub x]C[sub y] layers grown by RTCVD using C[sub 2]H[sub 4] is proposed. [ABSTRACT FROM AUTHOR]