Characterization of 4H-SiC grown on AlN/Si(100) by CVD

Abstract: By using chemical vapor deposition method, 4H-SiC films have been grown on AlN/Si(100) complex substrates at the temperature below 1100 °C. Substitutional Al and N are found in the SiC film. Photoluminescence (PL) peaks, related to Al acceptor and N shallow donor, respectively, have been observed at the room-temperature. The higher partial pressure ratio of SiH4 and C2H4 (P C2H4 / P SiH4 ≧1.62) results in more Si-vacancy (V Si) in the film. The PL peak related to the V Si acceptor level is also observed. [Copyright &y& Elsevier]