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The p-type GaN epilayers are prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe(super +) ions. The study confirms that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak around 3.1 eV is a conduction band-Fe acceptor transition.

We fabricated spin light emitting diodes using oxide tunneling barriers between ferromagnetic materials (Ni0.8Fe0.2/Co0.9Fe0.1) and semiconductors (GaAs) and investigated the temperature-dependent carrier lifetime and spin relaxation time of the active GaAs layer. We observed the circular polarization of the free exciton from the electroluminescence spectra due to the spin injection from the ferromagnetic material, whereas the circular polarization of the conduction band to acceptor transition was negligible. From the temperature-dependent carrier lifetime and spin relaxation time of the active GaAs layer, we found that the spin injection efficiency was larger than 25% between 20 and 180 K, where the magnetic field dependence of the spin lifetime was ignored. [ABSTRACT FROM AUTHOR]

The effects of InGaAs/GaNAs barrier combinations were investigated in the metal organic vapor phase epitaxy grown GaInNAs quantum wells (QWs). Significant improvement was made in the optical performance of the 1.3 μm range with the proposed structures. Structural investigation linked with the optical properties reveals that a thin InGaAs layer, placed between GaInNAs QWs and GaNAs layers, plays a role in redistributing the nitrogen within the QWs while maintaining a sharp interface. The amount of diffused nitrogen is proportional to the strain residing in the InGaAs layer, which explains the tendency of blueshift with the increase in GaNAs thickness. [ABSTRACT FROM AUTHOR]

The Ge2Sb2Te5 thin films deposited by a sputtering method on SiO2/Si substrates were annealed through a rapid thermal annealing process and performed a high-resolution transmission electron microscopy study in order to investigate the atomic arrangement of the metastable Ge2Sb2Te5. The metastable rocksalt structure having face-centered-cubic lattice was confirmed by high-resolution transmission electron microscopy images and simulated images on the directions of <100>, <110>, and <211> zone axes. According to the position of Ge and Sb in the metastable rocksalt structure, the atomic distribution alters when observed in different direction and this causes change in the charge-density distribution, resulting in different images in a high-resolution transmission electron microscopy. It is expected that as the crystallization proceeds, the Ge and Sb atoms tend to position themselves on a specific plane. From this aspect, the ordered structure model of the metastable Ge2Sb2Te5 was proposed by varying the position of the Ge and Sb atoms. [ABSTRACT FROM AUTHOR]

Neutron-transmutation-doped GaAs samples were prepared by irradiating the middle-level neutrons into the semi-insulating GaAs grown by a liquid encapsulated Czochralski method and subsequently implanted with Mn+. The characteristics of the Mn+-implanted neutron-transmutation-doped GaAs (namely, the implantation of Mn+ subsequent to neutron-transmutation-doping) were investigated by various measurements. The result of the energy dispersive x-ray peak displayed an injected Mn concentration of 9.65%. The photoluminescence peaks related to carbon and germanium acceptors were resolved, and the peaks related to Mn due to a neutral Mn acceptor were evidently observed. It is found that the proper activation for the neutral Mn acceptor starts from a relatively low annealing temperature of 600 °C for 15 min. The atomic force microscopy and magnetic forcemicroscopy images showed that magnetic clusters were well formed. The ferromagnetic hysteresis loop measured at 10 K was observed, and the temperature-dependent magnetization revealed that the two different phases exist at 135 and 360 K. The Curie temperature (Tc∼360 K) is caused by MnAs, which agrees with the clusters of the magnetic force microscopy image. [ABSTRACT FROM AUTHOR]

We compared the structural and optical properties of InAs/GaAs quantum dots grown by migration enhanced epitaxy, with and without arsenic, during indium deposition. The uniformity and size of the quantum dots are enhanced in a sample without arsenic. As a result, narrower and longer wavelength photoluminescence is observed in this sample. Furthermore, the thickness of the wetting layers is reduced by ∼20% in the sample without arsenic, and this result agrees well with the speculation that metallic indium has a smaller driving force for corrugating the InAs wetting layers before they are transformed from two-dimensional to three-dimensional layers. Additionally, the photoluminescence linewidth of the sample without arsenic is insensitive to the cryostat temperature due to two major factors: the reduced thickness of the wetting layers and the enhanced uniformity. In the sample with arsenic, however, the photoluminescence linewidth shows typical anomalies. [ABSTRACT FROM AUTHOR]

We report a method to fabricate carbon nanotubes (CNT)/conducting polymer composite films for the application of CNTs to field emission displays. The composite was prepared by a combination of electrochemical polymerization of pyrrole and electrophoretic deposition of CNTs. We obtained a uniform CNT/conducting polypyrrole polymer composite film. The CNTs were mainly coated on protrusions of the polypyrrole film and emitted electrons without rubbing and stretching. We realized a triode-type field emission array (FEA) using the CNT/polypyrrol composite. This FEA showed that the emission current was modulated by gate voltage of 30 V. The film morphology and emission characteristics of the CNT/conducting polymer composite were studied using optical microscopy, scanning electron microscopy, and an emission test in vacuum. [ABSTRACT FROM AUTHOR]

We have investigated the humidity and depurination (creating apurinic sites) effects on the electrical conduction in the λ-DNA films at different relative humidities and depurination times. The DNA films were found to follow the polaron hopping model, and the polaron hopping distance turned out to decrease at the higher relative humidity, more water molecules supposedly being adsorbed on the film. The activation energy showed little dependence on the depurination time at the higher relative humidity, whereas at the lower humidity it increased sharply with increasing depurination time. [ABSTRACT FROM AUTHOR]

A quantum dot transistors (QDT) and a nanowire transistor from a metal-semiconductor field-effect-transistors (MESFET)-type GaAs wafer was fabricated and characterized at low temperatures. The nanodevices showed a quantum mechanical effect like scanning electron microscope (SET) through excited states and negative differentail resistance (NDR).

Focuses on a study which reinvestigated the steady-state Nyquist theorem for multi-terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors. Discussion on the existing thermal noise theories for multi-terminal semiconductor devices; Methodology of the study; Results and discussion.

Deals with a steady-state Nyquist theorem for multi-terminal nondegenerate semiconductor devices. Derivation of formulas for the spectral intensities of the short-circuit thermal noise currents in arbitrarily shaped multi-terminal semiconductor devices under direct current bias; Experimental details; Result of the study.

Presents a study which derived an equivalent noise source with a useful functional form for Boltzmann transport equations from the classical expression of the noise source. Methods used in understanding the noise phenomena in semiconductor devices; Mathematical expression for n-type nondegenerate semiconductor; Discussion on the controversy over correctness of an equation of the spectral intensity of the noise source.

p-type GaN epilayers were prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe[sup +] ions. The properties of Fe[sup +] implanted GaN epilayers were investigated by various measurements. The results of photoluminescence measurement show that optical transitions related to Fe appear at 2.5 eV and around 3.1 eV. It was confirmed that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak around 3.1 eV is a conduction band-Fe acceptor transition. Apparent ferromagnetic hysteresis loops measured at 10 and 300 K were observed, and the temperature-dependent magnetization displayed a ferromagnetic behavior persisting above 350 K. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]