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Reinvestigation and extension of the steady-state Nyquist theorem for multi-terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors.

Authors :
Lee, J. B.
Min, H. S.
Park, Y. J.
Source :
Journal of Applied Physics; 1/1/1996, Vol. 79 Issue 1, p228, 14p
Publication Year :
1996

Abstract

Focuses on a study which reinvestigated the steady-state Nyquist theorem for multi-terminal semiconductor devices and its application to minimum noise figure in microwave field effect transistors. Discussion on the existing thermal noise theories for multi-terminal semiconductor devices; Methodology of the study; Results and discussion.

Details

Language :
English
ISSN :
00218979
Volume :
79
Issue :
1
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7659121
Full Text :
https://doi.org/10.1063/1.360936