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Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy.
- Source :
- Journal of Applied Physics; 10/15/2004, Vol. 96 Issue 8, p4122-4125, 4p, 2 Black and White Photographs, 1 Diagram, 1 Chart, 2 Graphs
- Publication Year :
- 2004
-
Abstract
- We compared the structural and optical properties of InAs/GaAs quantum dots grown by migration enhanced epitaxy, with and without arsenic, during indium deposition. The uniformity and size of the quantum dots are enhanced in a sample without arsenic. As a result, narrower and longer wavelength photoluminescence is observed in this sample. Furthermore, the thickness of the wetting layers is reduced by ∼20% in the sample without arsenic, and this result agrees well with the speculation that metallic indium has a smaller driving force for corrugating the InAs wetting layers before they are transformed from two-dimensional to three-dimensional layers. Additionally, the photoluminescence linewidth of the sample without arsenic is insensitive to the cryostat temperature due to two major factors: the reduced thickness of the wetting layers and the enhanced uniformity. In the sample with arsenic, however, the photoluminescence linewidth shows typical anomalies. [ABSTRACT FROM AUTHOR]
- Subjects :
- ARSENIC
INDIUM
QUANTUM dots
SEMICONDUCTORS
EPITAXY
PHOTOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 96
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 14604136
- Full Text :
- https://doi.org/10.1063/1.1794902