Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy.

MLA

Song, J. D., et al. “Influence of Arsenic during Indium Deposition on the Formation of the Wetting Layers of InAs Quantum Dots Grown by Migration Enhanced Epitaxy.” Journal of Applied Physics, vol. 96, no. 8, Oct. 2004, pp. 4122–25. EBSCOhost, https://doi.org/10.1063/1.1794902.

APA

Song, J. D., Park, Y. M., Shin, J. C., Lim, J. G., Park, Y. J., Choi, W. J., Han, I. K., Lee, J. I., Kim, H. S., & Park, C. G. (2004). Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy. Journal of Applied Physics, 96(8), 4122–4125. https://doi.org/10.1063/1.1794902

Chicago

Song, J. D., Y. M. Park, J. C. Shin, J. G. Lim, Y. J. Park, W. J. Choi, I. K. Han, J. I. Lee, H. S. Kim, and C. G. Park. 2004. “Influence of Arsenic during Indium Deposition on the Formation of the Wetting Layers of InAs Quantum Dots Grown by Migration Enhanced Epitaxy.” Journal of Applied Physics 96 (8): 4122–25. doi:10.1063/1.1794902.