Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices

A quantum dot transistors (QDT) and a nanowire transistor from a metal-semiconductor field-effect-transistors (MESFET)-type GaAs wafer was fabricated and characterized at low temperatures. The nanodevices showed a quantum mechanical effect like scanning electron microscope (SET) through excited states and negative differentail resistance (NDR).