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Structural characterization of metal organic vapor phase epitaxy grown GaInNAs quantum well with InGaAs and GaNAs barriers.

Authors :
Kim, K. S.
Kim, T.
Park, Y. J.
Baek, S. I.
Kim, Y. W.
Source :
Journal of Applied Physics; 8/15/2006, Vol. 100 Issue 4, p043509, 4p, 2 Black and White Photographs, 1 Diagram, 1 Chart, 5 Graphs
Publication Year :
2006

Abstract

The effects of InGaAs/GaNAs barrier combinations were investigated in the metal organic vapor phase epitaxy grown GaInNAs quantum wells (QWs). Significant improvement was made in the optical performance of the 1.3 μm range with the proposed structures. Structural investigation linked with the optical properties reveals that a thin InGaAs layer, placed between GaInNAs QWs and GaNAs layers, plays a role in redistributing the nitrogen within the QWs while maintaining a sharp interface. The amount of diffused nitrogen is proportional to the strain residing in the InGaAs layer, which explains the tendency of blueshift with the increase in GaNAs thickness. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
100
Issue :
4
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
22257343
Full Text :
https://doi.org/10.1063/1.2227274