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126 results on '"Cristoloveanu, S."'

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1. Topology and design investigation on thin film silicon BIMOS device for ESD protection in FD-SOI technology

2. A review of the Z²-FET 1T-DRAM memory: operation mechanisms and key parameters

3. Z²-FET DC hysteresis: deep understanding and preliminary model

4. Sharp-switching Z2-FET device in 14 nm FDSOI technology

5. Quasi-static capacitance measurements in pseudo-MOSFET configuration for Dit extraction in SOI wafers

6. Beyond TFET: Alternative mechanisms for sharp switch

7. CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodes

8. Channel-Length Impact on Supercoupling Effect in FD-MOSFETs

11. Z²-FET based ESD protections: innovative local clamps for UTBB FD-SOI Technology

12. La technologie Silicium sur Isolant

13. Fabrication and validation of A2RAM memory cells on SOI and bulk substrates

14. Technologie SOI : du miracle grenoblois aux dispositifs émergents

15. FinFET with ONO BOX for nonvolatile and unified memory

16. Comparison of junctionless GaN FinFET and AlGaN/GaN FinFET

17. 'GIFBE related threshold voltage and subthreshold slope in p-channel FD triple-gate SOI MOSFETs

18. Reliability of ultrathin buried oxides for multi-VT FDSOI technology

19. Demonstration of A2RAM memory cells fabricated by ion implantation

20. A new extraction method for estimating the bonding quality of metal bonding wafers

21. Retention time enhancement in FD 1T-DRAM

22. Coupling effects in vertical double-gate SOI MOSFET

23. An analytical model of back-gate coupling effects in vertical double-gate SOI MOSFETs

24. Z2-FET as a novel FDSOI ESD protection device

25. Record ON currents for FDSOI HK-MG n & p-type tunnel FETs bu using ultrathin strained SiGe body

26. Pseudo-MOSFET under illumination: a novel method for extraction of carrier lifetime

27. Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

28. Normally off single-nanoribbon Al2O3/GaN MOSFET

29. Exploiting SOICMOS for the extreme environments of future space missions

30. Comparing single event upset sensitivity of bulk vs. SOI based FinFET SRAM cells using TCAD simulations

31. Effects of fin width on memory windows in FinFET ZRAMs

32. Origins of universal mobility violation in SOI MOSFETs. ESSDERC

33. Analytical modelling of short channel planar FDSOI and triple-gateFET transistors

34. Advanced SOI and multi-gate transistors : special mechanisms and characterization

35. New concepts for 1T-DRAMs on SOI

36. Physics and Technology of Multiple-Gate MOSFETs

37. Characterization techniques for SOI materials and transistors

38. A new fully depleted double-gate MSDRAM cell with added nonvolatile functionality

39. Ultrathin SOI and GeOI Materials and Transistors. Invited paper

40. Magnetoresistance technique for mobility extraction in triple gate FinFETs at low temperature

41. Improved extraction of effective electric field and hole mobility in Ge and GeOI MOSFETs

42. Partially depleted double-gate 1T-DRAM cell using nonvolatile memory function for improved performance

43. Evaluation of electrical characteristics in fully depleted SOI MOSFETs for variable threshold voltage scheme

44. Capacitor-less A-RAM memory cell : operation, scaling and expected performance

45. A 2D analytical model of threshold voltage for Pi-gate FinFET transistors

46. SOI trends: hot and green

47. 3D source/drain doping optimization in multi-channel MOSFET. ESSDERC

48. Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator

49. Floating body effects for SOI memories

50. 1T-DRAM structures

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