An analytical model of back-gate coupling effects in vertical double-gate SOI MOSFETs

Authors :: Guo, Y.
Liu, Franklin
Chang, S.
Yao, J.
Cristoloveanu, S.
Rasolofoniaina, Brigitte
Institut de recherches sur la catalyse et l'environnement de Lyon (IRCELYON)
Université Claude Bernard Lyon 1 (UCBL)
Université de Lyon-Université de Lyon-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC)
Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut National Polytechnique de Grenoble (INPG)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)
Nanjing University of Posts and Telecommunications [Nanjing] (NJUPT)
Source :: 9th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2013, EuroSOI 2013, Jan 2013, Paris, France. pp.P2.1
Publication Year :: 2013
Publisher :: HAL CCSD, 2013.
Abstract: Section 2: Modeling; International audience

Subjects :: [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics

Language :: English
Database :: OpenAIRE
Journal :: 9th Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, EuroSOI 2013, EuroSOI 2013, Jan 2013, Paris, France. pp.P2.1
Accession number :: edsair.dedup.wf.001..6a34bcdc6b2a2e14faafc58d8808636a

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