Z²-FET DC hysteresis: deep understanding and preliminary model

International audience; Z²-FET, a partially gated diode, was explored for ESD application due to its sharp switching behavior [1,2]. 1T-DRAM application of Z²-FET has recently been evidenced [3,4] leading to an even stronger interest for this device. However, a deep explanation of physical phenomena involved in Z²-FET operation has not been proposed yet. In this paper, we provide a detailed description of the Z²-FET DC behavior based on TCAD simulations and propose corresponding analytical modeling.