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• The single event effect of FORMOSAT-7/COSMIC-2 recorded by the COTS GPS receiver. • The WSRs accumulate faster at higher altitude. • The WSRs occur concentratedly in the SAA and the drift of it can be estimated. • The border of the SAA could be described through the geomagnetic field strength. The FORMOSAT-7/COSMIC-2 (F7/C2) satellite constellation, a joint Taiwan-US collaboration mission, was launched on 25 June 2019. Following the FORMOSAT-3/COSMIC, the F7/C2 mission aims to provide global users the next-generation global navigation satellite system (GNSS) radio occultation data. The mission consists of six identical small satellites with an inclination angle of 24°, launched to the parking orbit of 720 km, and then transferred to the mission orbit of 550 km. Each satellite bus is equipped with two commercial off-the-shelf global positioning system receivers manufactured by Surrey Satellite Technology Ltd. for positioning, navigation, and timing functions. This receiver generates "GPS Receiver (bus GPSR) Warm Start Requested (WSR)" messages after commissioning, which could be considered as a kind of single event effect (SEE). More than 7000 WSR events have been recorded in 3 years after launch, providing another opportunity to investigate the SEE with the commercial off-the-shelf bus GPSR. In addition, the F7/C2 mission is the first satellite constellation that allows scientists to investigate the SEE using the same constellation at different altitudes of Low-Earth orbit. This study investigates and discusses the cumulative rate, distribution of WSRs, and their relationships between altitude and geomagnetic field. The statistical method is applied to define a warning area of the high probability occurring the SEE of this kind of component based on the geomagnetic field, whose corresponding strength is around 21,200/20,550 nT and close to the South Atlantic Anomaly area. Moreover, the relationships with space weather, including the disturbance of the Earth's magnetic field (Kp index) and the solar activity (F10.7 index), are also analyzed and reported. [ABSTRACT FROM AUTHOR]

A novel partially depleted (PD) silicon-on-insulator (SOI) structure is realized by a modified process flow highlighting the improved radiation hardness. The key step to modifying the initial SOI wafers is neutron irradiation, followed by a standard post-irradiation laser annealing process that introduces localized traps with a deep level. The deep-level traps in the silicon film act as recombination centers that reduce the minority carrier lifetime effectively. A trap-rich layer is generated near the back interface after the wafer is exposed to neutron irradiation, followed by laser annealing to remove top defects. It is confirmed by simulation and experimental results that the body potential instability in PD devices, which may be introduced by high-electricalfield ionization and the single-event effect, has been efficiently suppressed. [ABSTRACT FROM AUTHOR]

The Single Event Effect (SEE) of FinFET devices has become one of the challenging issues affecting the reliability of modern electronic systems in space and terrestrial applications. However, the conventional FinFET device simulation steps are tedious and take a long time. This paper proposes a method based on a convolutional neural network (CNN) to predict the single event effect (SEE) of FinFET devices. By entering different particle incidence conditions, the SEE profiles, as well as the characteristic parameters, can be obtained quickly and accurately. The neural network model used in the experiments has a high prediction accuracy. The error of our trained network model in predicting the drain transient current pulse profile is only 0.012, the Mean Square Error (MSE) for predicting the peak drain transient current and total collected charge are only 0.00207 and 0.00084. The total time for training, validation and prediction of the neural network model in this study is 352 seconds, and the prediction time is much shorter, which is much lower than the simulation time of TCAD software. The minimum simulation time of the TCAD simulation software is 1901 seconds, and the simulation requires further modification of the resultant plots of the single event effect transient current curves.

Bulk silicon Complementary Metal Oxide Semiconductor (CMOS) devices have distinct single event latch-up (SEL) problems in aerospace. Therefore, it is essential that CMOS devices are designed with appropriate circuit-level methods. Traditional resistor hardness satisfies the current aerospace trend of low cost, high performance, and miniaturization. Therefore conventional resistor hardness is often applied in circuit-level designs due to the reduction of latch-up current. In circuits containing a DC-DC buck converter, the resistor is connected to the back of the converter in the traditional method. However, the traditional method is unable to take devices out of the latch-up owing to the small resistance range. To solve this problem, the paper proposes an improved design for the resistor in front of the DC-DC buck converter. The proposed method enables the devices to exit the latch-up by increasing the resistance range according to the input characteristic of the DC-DC buck converter. The paper quantifies the range of the resistor through the parametric model containing the resistor and the DC-DC buck converter. Two CMOS devices are chosen for pulsed laser experiments, verifying that the proposed method increases the resistance ranges by 300% to 400% compared to the conventional method. It is also demonstrated that the proposed method exits the devices from latch-up within the resistor ranges. That is, the resistance ranges of 34 Ω~41 Ω and 51 Ω~56 Ω reduce the latch-up currents of the devices to below holding currents of 72.1 mA and 24.2 mA, respectively. [ABSTRACT FROM AUTHOR]

The objective of the Dosimetry Inter-comparison and Miniaturization Experiment (DIME) approach is to compare different miniature electronic dosimeters for monitoring exposure to ionizing radiation primarily in terms of potential degradation due to total ionizing dose (TID) and the threat of single event effects (SEEs). As the title implies, DIME is divided in two parts: DIME-1 is a passive board that is turned on only to read the cumulative dose and DIME-2 is an active board that requires continuous power to monitor the radiation-induced energy depositions that can lead to SEE. This article describes the details of the operation of DIME-2 and the results of the flight on the Demonstration and Science Experiments (DSX) satellite which orbited the Earth in an elliptical middle earth orbit (MEO) orbit that extended from 6000 to 12 000 km at an inclination of 42° thereby crossing the entire slot region between the inner and outer electron belts. Measurements made every 15 min consistently showed a large peak in the energy depositions at perigee and a small one near apogee with fewer events in the slot region. [ABSTRACT FROM AUTHOR]

In this article, the single event responses of a 4-Mb commercial two-transistor and two-capacitor (2T2C) ferroelectric random access memory (FRAM) are studied. A microbeam was used to identify sensitive circuit areas. Various response categories are identified. The two most vulnerable sensitive areas were investigated using reverse engineering, and the results indicate that the n-well resistors located in the peripheral circuits are the primary source of the bit upset response and functional interruption. Analysis results indicate that ion strikes on the n-well resistor generate current disturbances in circuits, which can alter the polarization state of the ferroelectric bit storage capacitor and interrupt the data transfer process of the device. [ABSTRACT FROM AUTHOR]

Silicon based Super-junction power-MOSFETs (SJ-MOS) are a crucial part of nowadays power conversion systems, like Switched Mode Power Supplies. Due to the high electric fields in the drift zone of these devices and the typical usage profiles SJ-MOSs are sensitive to ionizing radiation, in particular to single event effects (SEE). It has been shown, that even at sea level radiation related device failure due to single event burnout (SEB) can occur. Modern SJ-MOSs are based on an internally complex, real three-dimensional structure, like pillar-shaped, high aspect ratio doping regions. The design of next generation devices, with improved electrical performance, while keeping the sensitivity to SEE on the same level is very challenging. Three-dimensional ion mapping techniques with 55 MeV carbon, 110 MeV sulphur, 417 MeV calcium and 1.16 GeV gold, as presented in this paper, will result in more comprehensive state of the art failure rate testing. So, in particular three-dimensional ion mapping will assist to generate more in depth knowledge of SEE device failure mechanisms. • Of Super-Junction devices • With different Ions/LETs • Variable depth • Nondestructive • Up to destruction • Maps associated to internal device layout • BJT/Avalanche effects associated to device layout [ABSTRACT FROM AUTHOR]

Peak transient currents due to pulsed-laser or heavy-ion irradiation of Ge $p$ MOS FinFETs are nearly independent of gate bias. This is because the prompt photocurrent is due primarily to a transient source–drain shunt. In contrast, long-term diffusion charge collection is strongly gate-bias dependent. This bias dependence results from hole injection from the source in response to the transient increase in electron concentration in the channel. The transients measured at the source terminal change polarity when the strike location moves from the source to the drain, but this effect does not occur for the transients measured at the drain terminal. Charge collection mechanisms are studied using TCAD simulations. [ABSTRACT FROM AUTHOR]

Future spacecrafts require onboard electronics with ever-more radiation hardness levels. This should be achieved without using metal shields to keep low size and weight. This brief presents an Inductorless DC/DC converter able to convert a wide input voltage range, from 6 V to 60 V, in two points of load at 5 V and 1.65 V. Thanks to an innovative insulating stage, based on electrostatic coupling architecture, the DC/DC converter is able to protect the supplied loads from overvoltages in the power buses and errors, due to Single Event Effects, in the driving algorithm. In addition, avoiding the use of inductors and transformers, it reduces the electromagnetic interference generated by classic switching mode power supplier. The whole converter is fabricated in 0.35 $\mu \text{m}$ HV-CMOS technology and electrically characterized by experimental measurements. Specific tests for space compliance were performed as Total Ionization Dose and Single Event Effect tests, highlighting the feasibility use of the proposed converter for space applications. [ABSTRACT FROM AUTHOR]

Real-time soft error rate of 65-nm QDRII+ static random access memory was measured on the Tibetan-plateau with an altitude of 4300 m. Error types including single-bit upset (SBU), multiple-cell upset (MCU), and burst errors were observed. The MCU ratio is 23%, with a maximum size of nine cells. Majority of the MCU events are vertically oriented along the well stripes. Monte Carlo simulations were further performed to study the characteristics of the neutron-induced secondary ions. Diverse secondary ion species, from the proton to Re, were found, which were significantly affected by the presence or absence of the tungsten layer. The impact of neutron energy on the linear energy transfer (LET), range, and deposited charge of secondary ions in the sensitive volume was revealed. [ABSTRACT FROM AUTHOR]

The SEE susceptibility on 28 nm Xilinx Zynq-7020 All Programmable SoC was investigated at heavy ion microbeam facilities in Institute of Modern Physics (IMP). The sensitive SEE spots distribution in entire PS area was obtained by running the on chip memory (OCM) test program. The extracted chip bottom modules layout information indicated that the SEE sensitive events occurred in the OCM area, central data processing area, and interfaces controlling buffer registers elements area, accounting for 19.6%, 32.6% and 47.8%, respectively. The results showed it was possible that the SEE events in other areas appeared more serious than in the target block located area. Meanwhile, the partial cross section was gotten in the test and it was (5.75 ± 0.85) × 10−5 cm2. [ABSTRACT FROM AUTHOR]

Abstract The China Spallation Neutron Source (CSNS) has started commissioning in early 2018. The neutron spectrum from the tungsten target bombarded by a 1.6 GeV proton beam is very wide, namely with characteristics of a white neutron spectrum. In this paper two white neutron beams schemed at CSNS are simulated by using the FLUKA code. And the beam spectrum and intensity are compared with that from other neutron sources in the world. The fidelity for the chip irradiation experiments by using the neutron spectra of these two white-neutron beam lines is estimated. These atmospheric-like neutron beams will be the first white neutron beam lines at CSNS and more intensive ones for carrying out an accelerated test of the neutron-induced single event effect (SEE) will be available in a few years. Highlights • Two white neutron beams schemed at CSNS are simulated by using the FLUKA code. • The Back-n atmospheric-like neutron beams will be the first white neutron beam lines at CSNS. • Intensities of the white neutron beams at CSNS are higher than the neutron beam intensities at other facilities. [ABSTRACT FROM AUTHOR]

A new probabilistic model aiming to cover all aspects of the solar energetic particle (SEP) environment required for mission specifications is presented; the solar accumulated and peak proton and heavy ion radiation environment model. This model includes an updated reference data set upon which the analysis is based, a thorough evaluation of fitting procedures for SEP fluxes, a probabilistic helium model not based on proton fluxes, an extension to heavier ions based on new analysis of the Advanced Composition Explorer/solar isotope spectrometer data set, and a careful extrapolation of all output spectra to cover energies from 0.1 MeV/nuc to 1 GeV/nuc. Also included in this paper are derivations of spectra for rare solar particle events, which would occur at a given mean frequency and a new description for implementing the model to make it accessible to the public through systems, such as SPace ENVironment Information System or OMERE. [ABSTRACT FROM PUBLISHER]

Electrical behavior of commercial off-the-shelf normally-off GaN power transistors under heavy ion irradiation is presented based on technology computer aided design numerical simulation in order to better understand the mechanism of single event effects (SEEs) in these devices. First, the worst case has been defined from the single event transient mechanism. Then, the decrease in the electric field observed after irradiation and the traps effect have been addressed. Finally, possible mechanisms of SEE in these devices under heavy ion are proposed. [ABSTRACT FROM PUBLISHER]

To evaluate a device sensitivity against alpha particles, traditional Single Event Effect (SEE) tests are conducted using isotope source, which emits particles just above 5 MeV. Relentless downscaling and higher packing density have driven the demand of developing increasingly complex packaging: smaller, thinner, having enormous input/output pins count per chip. Flip-chip bonded devices meet all these demands, but their testing against alpha particles is a big challenge. The range of alpha ions, emitted by the isotope sources, is very short, which precludes their penetration till active circuit – from either side of the chip. This paper presents an evidence that high energy alpha irradiation can potentially be used to measure and correlate alpha SEE cross-section for such devices. The proposed method uses high energy alpha particles, directed from the backside of die, to mimic low energy (~ 5 MeV) at the sensitive volume (SV). The incident particles penetrate the entire silicon substrate and deposit charge in the SV to induce upsets. The energy and LET of an ion at the SV, having traversed the entire substrate, is determined using TRIM. SEE experiments are performed on 14 nm FinFET SRAM devices, assembled in flip-chip and wire-bonded structures, respectively, for backside and traditional top-side testing. High energy alpha irradiations were simulated using CRÈME-MC – a Geant4 based Monte Carlo transport code. Tests and simulation results, for traditional and proposed methods, are presented for correlation. [ABSTRACT FROM AUTHOR]

Single Event Transients (SETs) are a major concern for space applications, particularly when hardened flip flops are used to reduce the sensitivity of sequential logic. Characterizing SETs is complex as both the cross section and the pulse width must be measured. In the 65 nm test chip presented in this paper, three different SET measurement circuits, implemented on the same die, are characterized and compared. Using these SET detectors, heavy-ion test results are presented. The detectors are compared and a detailed study of the SET sensitivity of multiple gates operating at different logical, load and voltage conditions is presented. [ABSTRACT FROM PUBLISHER]

As the feature size of transistors scaling down, the integration density of memory circuits such as Static random access memory (SRAM) cells increases, and they are more sensitive to Single event effect (SEE). The Single event multiple node upset (SEMNUs) caused by charge sharing effect is becoming a major concern in memory circuit design. In this paper, a new radiation-hardened SRAM cell (NRHC-14T) is proposed on the basis of considering the radiation-hardened and the operating performance of the basic circuit. The circuit uses polarity hardening technology to reduce the number of sensitive nodes, and can recover from Dual-node upset (DNU) on the basis of all single-node upset (SNU) recovery. Compared to other radiation-hardened cells, NRHC-14T cell than We-Quatro, DICE, SAR14T, RSP14T, RHPD-12T, QUCCE12T, and SEA14T increased by 60.12 %, 9.22 %, 21.39 %, 84.34 %, 17.92 %, 100.58 %, and 129.48 % of the writing speed, and saved by 34.28 %, 57.14 %, 22.85 %, 11.43 %, 68.57 %, 34.28 %, and 79.99 % of the power consumption, respectively. In addition, NRHC-14T has better stability, the highest Critical charge (Q crit) and the best overall performance. The cell proposed in this paper can be well used to aerospace electronic devices and work stably in space radiation environment by virtue of its excellent radiation-hardened ability and good overall performance. • This paper presents a new radiation-hardened SRAM cell (NRHC-14T); • It has a fast read and write speed, will be strong stability; • It reduces the number of sensitive nodes to only three; • On the basis of resisting SNU, it can resist DNUs through reasonable layout. [ABSTRACT FROM AUTHOR]

The single event effect (SEE) response of devices and differential pairs in a 32-nm SOI CMOS technology is explored using laser-induced carrier injection and TCAD simulations. Both nFETs and pFETs in this technology exhibit similar sensitive area to laser-induced SEE and are strongly dependent on the drain bias condition. TCAD simulations were conducted in order to confirm results and utilize a 3-D mixed-mode simulation approach to more accurately model testing conditions. The differential pair (diff. pair) circuit SEE response extends the discussion to include the use of these devices in a core analog/RF circuit block. The analysis includes the use of floating body (FB) and body-connected (BC) devices. Body-connected FETs tend to exhibit a transient response that is much shorter in duration when compared directly to its floating body counterpart. [ABSTRACT FROM PUBLISHER]

Extracting information about MCUs from SEU data sets can be a challenge without physical layout information. Many modern static-random access memory (SRAM) components interleave memory cells to improve the robustness of error-correcting codes (ECC) that detect and correct errors in the memory array. Bit interleaving has also become popular with other components with large SRAM arrays, including field-programmable gate arrays (FPGAs). In this paper, we present a technique for extracting MCUs statistically from radiation test data. Further, we use this technique to extract MCU information from a 28-nm FPGA that uses interleaving to protect the configuration memory. [ABSTRACT FROM PUBLISHER]

In this paper, we describe functional anomalies induced by the atmospheric radiation environment in flight balloon during polar vortex and equatorial operational campaigns. These anomalies are the consequence of single event effects (SEE) and are characterized by over-current events on electronic boards inducing the inability to enter into communication. Objectives of this paper consist of describing and analyzing data issued from operational in-flight, then to demonstrate that radiations are the origin of anomalies. High-energy neutron operational campaign (Uppsala) and SEE high-energy proton test at device level (KVI) were performed. Modeling approaches were proposed and results are compared with in-flight data. Then, this work demonstrates the operational impact induced by neutron and proton environments on electronic balloon board and proposes modeling and experimental approaches to quantify the SEE risk. [ABSTRACT FROM PUBLISHER]

A statistical analysis comparing the number of CREME-96 worst-week environments to a space environment particle flux data analysis and the PSYCHIC model is presented. This analysis provides an indication of the number of worst-week environments that are required to obtain a particular confidence level and determine the associated risk of a destructive single event effect over a mission but highlights the drawback of such an approach compared to using a statistical model. A method for direct assessment of the number of Single Event Effects expected specific to components and shielding geometries using the European Space Agency SEPEM system is also presented. [ABSTRACT FROM PUBLISHER]

Single event effect (SEE) is an important problem in the reliability research of integrated circuits. The study of SEE of traditional MOSFET devices is mainly based on simulation software, which is characterized by slow simulation speed, large computation and time-consuming. In this paper, a SEE research method based on deep learning is proposed. The method relies on 28 nm MOSFET. The complete drain transient current pulse, transient current peak value and total collected charge can be obtained in a short time by inputting relevant parameters that affect the SEE. The accuracy of the network for predicting transient current peak and total collected charge is 96.95% and 97.53% respectively, and the mean goodness of fit of the network for predicting the drain transient current pulse curve is 0.985. Compared with TCAD Sentaurus software, the simulation speed is increased by 5.89 × 10 3 and 1.50 × 10 3 times respectively. This method has good prediction effect and provides a new possibility for the study of SEE., (© 2022 IOP Publishing Ltd.)

Transient currents in AlGaN/GaN High Electron Mobility Transistors (HEMTs) induced by focused ion beams are measured. Enhanced charge collection occurs in the on- and pinch-off states of AlGaN/GaN HEMTs. The first-order mechanism of enhancement is associated with bipolar and back-channel effects. In addition, we suggest that the temporal positive charge buildup contributes to the enhanced charge collection. The effect of displacement damage on the enhanced charge collection is also discussed. [ABSTRACT FROM PUBLISHER]

The quantitative correlation between the incident energy of a laser pulse and the Linear Energy Transfer (LET) of a heavy-ion beam is verified up to very high energy levels, by comparing the scatter plots of amplitude vs. duration of ensembles of Analog Single Event Transients (ASETs) generated with both methods in a complex CMOS RadHard Analog-to-Digital Converter (ADC). The same energy correlation is then confirmed in a more traditional way, by matching the onset energy thresholds of Digital SETs (DSETs) of a comparator-based voltage supervisor circuit. The observed dependency of the upset threshold on the circuit response time leads to a more general discussion of the influence that laser pulse-widths have on the SET sensitivity of mixed-signal circuits. Preliminary to this study, the energy of the laser apparatus at the Aeroflex facility was aligned to that of the NRL laser by comparing the transient shapes produced when a p-n photodiode, previously used for similar comparison purposes, was irradiated. [ABSTRACT FROM PUBLISHER]

3-D histograms grading the frequency of occurrence of pulsed-laser and heavy-ion induced ASETs against their durations and amplitudes are collected and interpreted on both radiation-hardened and commercial 16-bit ADCs operated at 10 MSps. The histograms encompass traditional cross-section tabulations, modeled after digital upset scoring techniques based on counting events that exceed an arbitrary threshold; yet, they provide a more exhaustive alternative. This data representation technique offers an intuitive visual assessment of the circuit response to radiation, which helped us identify in heavy-ion test results the same trend of ASET width increase, peak decrease versus LET recently published for laser data. The method proposed in this work hinges on a database structure that allows for the definition of custom figures of merit, providing a comprehensive tool for rating radiation hardness in complex analog and mixed-signal circuits. [ABSTRACT FROM AUTHOR]

We report on soft error rates of 45-nm bulk CMOS SRAMs measured in real-time testing experiments. Results are consistent with accelerated testing and demonstrate that alpha-particle induced soft error rates are negligible. [ABSTRACT FROM AUTHOR]

We report on measured radiation-induced soft error rates (SER) of memory and logic devices built in a 22 nm high-k+metal gate bulk Tri-Gate technology. Our results demonstrate excellent single event upset (SEU) scaling benefits of tri-gate devices. For cosmic radiation, SEU SER reduction levels of the order of 1.5\times-4\times are observed relative to 32 nm planar devices, while for alpha-particles, the measured SEU SER benefit is in excess of 10\times. Similar improvements are observed for Tri-Gate combinational logic and memory array multi-cell upset (MCU) rates. Reduced SER (RSER) device SER performances (relative to standard, non -RSER devices) are on par or better than that of tested 32 nm planar devices. Finally, a novel, efficient SER reduction design called RTS is introduced. [ABSTRACT FROM AUTHOR]

We compare the statistical errors in single event experiments at various facilities. It is possible to have systematic standard deviations in the data as large as 90%, and to have errors of 35% when the desired values are less than 10%. In general the systematic errors in dosimetry are much larger than the statistical errors in the data points. Observation of the dosimetry errors should be a major part of the data analysis. We examine several experiments that compared ionization induced errors by low energy ions and high energy ions at different facilities. They are consistent in showing that the results do not depend on ion or energy. [ABSTRACT FROM AUTHOR]

Heavy ion test results show worst-case test conditions for single-event gate rupture (SEGR) of power MOSFETs. Contrary to common belief, the worst-case ion condition for SEGR is not the ion with the deepest penetration depth in the device or highest LET at the die surface, but the ion beams with Bragg Peak positioned at or near the interface of the epitaxial layer and the highly doped substrate. The factors that have significant impact on SEGR thresholds are evaluated and discussed. The factors that are considered include: ion beam, drain bias, gate bias, ion species, ion range, surface LET and the construction layer of the power DMOSFET. An estimated worst-case ion range table for krypton, xenon and gold is provided for reference. [ABSTRACT FROM AUTHOR]

Frequency synthesizers are fundamental building blocks in radio frequency, communications, and analog signal processing for generating high accuracy oscillatory signals. In general, the frequency synthesizer is the most sensitive block in the system since many of the signal processing elements such as clock, filters, and up/down converters depend on the synthesizer generating a clean sinusoidal signal at the given frequency. For radiation environments, the response and the sensitivity of the phase-lock loop (PLL) and the synthesizer block is very critical. This paper examines the effect of single events (SEE) radiation on the PLL locking and steady state response. The PLL circuits operating at 2.4 GHZ were designed and fabricated using a 0.13 μm CMOS process This paper presents the experimental and simulations results on the SEE radiation effects on the PLL. [ABSTRACT FROM AUTHOR]

Neutron SEE data for memories shows that the distribution of MBU's is a geometrical progression. We demonstrate that this permits the proportion of MBU's to be calculated from the mean and variance of the errors per read-cycle. [ABSTRACT FROM AUTHOR]

The single event effects and hardening of a 0.15 μm antifuse FPGA, the AX device, were investigated by beam test and computer simulation. The beam test showed no permanent damage mode. Functional failures were observed and attributed to the upsets In a control logic circuit, the startup sequencer Clock upsets were observed and attributed to the single event transients in the clock network. Upsets were also measured In the user flip-flop and embedded SRAM. The hardening technique dealing with each upset mode is discussed in detail. SPICE and three-dimensional mixed-mode simulations were used to determine the design rules for mitigating the multiple upsets due to glancing angle and charge sharing. The hardening techniques have been implemented in the newly fabricated RTAXS device. Preliminary heavy-ion-beam test data show that all the hard-wired hardening solutions are working successfully. [ABSTRACT FROM AUTHOR]

Abstract: Single Event Effects (SEEs) triggered by energetic heavy ions traversing a sensitive parts of electric devices have been studied using high-energy heavy ion microbeams connected with Transient Ion Beam Induced Current (TIBIC) measuring system at the Japan Atomic Energy Agency (JAEA) Takasaki Ion Accelerators for Advanced Radiation Applications (TIARA) facility. In the TIBIC system, SEE for semiconductor device, that is fast charge collection, has been observed in timescales of the order of picoseconds. In this paper, we show successful demonstration of the performance of the system, in which clear images of TIBIC map have been observed for Si pin photodiodes irradiated by 260MeV 20Ne7+ and also by 520MeV 40Ar14+ microbeams. [Copyright &y& Elsevier]