144 results on '"Martin Foldyna"'
Search Results
2. Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditions
- Author
-
Weixi Wang, Éric Ngo, Pavel Bulkin, Zhengyu Zhang, Martin Foldyna, Pere Roca i Cabarrocas, Erik V. Johnson, and Jean-Luc Maurice
- Subjects
Cu-In nanoparticle ,plasma treatment ,silicon nanowire ,PECVD ,TEM ,Chemistry ,QD1-999 - Abstract
We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H2-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma. The SiNW growth process at 420 °C induces a phase transformation of the catalyst cores to Cu7In3; while a hydrogen plasma treatment at 420 °C without silane can lead to the formation of the Cu11In9 phase. In situ transmission electron microscopy experiments show that the SiNWs synthesis with Cu-In bimetallic catalyst NPs follows an essentially vapor-solid–solid process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs—below 10 nm—among which we observe the metastable hexagonal diamond phase of Si, which is predicted to have a direct bandgap.
- Published
- 2023
- Full Text
- View/download PDF
3. Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation
- Author
-
Nan Guan, Andrey Babichev, Martin Foldyna, Dmitry Denisov, François H. Julien, and Maria Tchernycheva
- Subjects
FDTD modeling ,nanowire LED ,nitride nanowires ,photonic integrated circuit ,photonic platform ,SiN/InGaN co-integration ,visible light communication ,Technology ,Chemical technology ,TP1-1185 ,Science ,Physics ,QC1-999 - Abstract
The optimized design of a photonic platform based on a nanowire light emitting diode (LED) and a nanowire photodetector connected with a waveguide is proposed. The light coupling efficiency from the LED to the detector is optimized as a function of the geometrical parameters of the system using the finite difference time domain simulation tool Lumerical. Starting from a design reported in the literature with a coupling efficiency of only 8.7%, we propose an optimized photonic platform with efficiency reaching 65.5%.
- Published
- 2018
- Full Text
- View/download PDF
4. Optical Study and Experimental Realization of Nanostructured Back Reflectors with Reduced Parasitic Losses for Silicon Thin Film Solar Cells
- Author
-
Zeyu Li, Rusli E, Chenjin Lu, Ari Bimo Prakoso, Martin Foldyna, Rasha Khoury, Pavel Bulkin, Junkang Wang, Wanghua Chen, Erik Johnson, and Pere i Roca Cabarrocas
- Subjects
light trapping ,silicon thin film ,photovoltaics ,polystyrene sphere assisted lithography ,nanostructured back reflectors ,Chemistry ,QD1-999 - Abstract
We study light trapping and parasitic losses in hydrogenated amorphous silicon thin film solar cells fabricated by plasma-enhanced chemical vapor deposition on nanostructured back reflectors. The back reflectors are patterned using polystyrene assisted lithography. By using O2 plasma etching of the polystyrene spheres, we managed to fabricate hexagonal nanostructured back reflectors. With the help of rigorous modeling, we study the parasitic losses in different back reflectors, non-active layers, and last but not least the light enhancement effect in the silicon absorber layer. Moreover, simulation results have been checked against experimental data. We have demonstrated hexagonal nanostructured amorphous silicon thin film solar cells with a power conversion efficiency of 7.7% and around 34.7% enhancement of the short-circuit current density, compared with planar amorphous silicon thin film solar cells.
- Published
- 2018
- Full Text
- View/download PDF
5. InGaN/GaN nanowire flexible light emitting diodes and photodetectors.
- Author
-
Nan Guan, Xing Dai, Hezhi Zhang, Lorenzo Mancini, Akanksha Kapoor, Catherine Bougerol, Francois H. Julien, Nicolas Cavassilas, Martin Foldyna, Christophe Durand, Joel Eymery, and Maria Tchernycheva
- Published
- 2017
- Full Text
- View/download PDF
6. Tapering-free monocrystalline Ge nanowires synthesized via plasma-assisted VLS using In and Sn catalysts
- Author
-
Jian Tang, Jun Wang, Jean-Luc Maurice, Wanghua Chen, Martin Foldyna, Linwei Yu, Egor D Leshchenko, Vladimir G Dubrovskii, and Pere Roca I Cabarrocas
- Subjects
Mechanics of Materials ,Mechanical Engineering ,General Materials Science ,Bioengineering ,General Chemistry ,Electrical and Electronic Engineering - Abstract
In and Sn are the type of catalysts which do not introduce deep level electrical defects within the bandgap of germanium (Ge). However, Ge nanowires produced using these catalysts usually have a large diameter, a tapered morphology, and mixed crystalline and amorphous phases. In this study, we show that plasma-assisted vapor–liquid–solid (PA-VLS) method can be used to synthesize Ge nanowires. Moreover, at certain parameter domains, the sidewall deposition issues of this synthesis method can be avoided and long, thin tapering-free monocrystalline Ge nanowires can be obtained with In and Sn catalysts. We find two quite different parameter domains where Ge nanowire growth can occur via PA-VLS using In and Sn catalysts: (i) a low temperature-low pressure domain, below ∼235 °C at a GeH4 partial pressure of ∼6 mTorr, where supersaturation in the catalyst occurs thanks to the low solubility of Ge in the catalysts, and (ii) a high temperature-high pressure domain, at ∼400 °C and a GeH4 partial pressure above ∼20 mTorr, where supersaturation occurs thanks to the high GeH4 concentration. While growth at 235 °C results in tapered short wires, operating at 400 °C enables cylindrical nanowire growth. With the increase of growth temperature, the crystalline structure of the nanowires changes from multi-crystalline to mono-crystalline and their growth rate increases from ∼0.3 nm s−1 to 5 nm s−1. The cylindrical Ge nanowires grown at 400°C usually have a length of few microns and a radius of around 10 nm, which is well below the Bohr exciton radius in bulk Ge (24.3 nm). To explain the growth mechanism, a detailed growth model based on the key chemical reactions is provided.
- Published
- 2021
7. Liquid-assisted vapor-solid-solid silicon nanowire growth mechanism revealed by in situ TEM when using Cu-Sn bimetallic catalysts
- Author
-
Pere Roca i Cabarrocas, Pavel Bulkin, Jean-Luc Maurice, Martin Foldyna, Weixi Wang, Ileana Florea, Eric Ngo, Institut de Chimie et des Matériaux Paris-Est (ICMPE), Institut de Chimie du CNRS (INC)-Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE09-0011,HexaNW,Croissance vapeur-liquide-solide de nanofils de silicium de phase hexagonale diamant(2017), and ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010)
- Subjects
In situ ,Materials science ,Silicon ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,7. Clean energy ,01 natural sciences ,Silane ,Dissociation (chemistry) ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Catalysis ,chemistry.chemical_compound ,General Energy ,Chemical engineering ,chemistry ,Transmission electron microscopy ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Molecule ,Physical and Theoretical Chemistry ,010306 general physics ,0210 nano-technology ,Bimetallic strip - Abstract
International audience; The vapor-liquid-solid (VLS) and vapor-solid-solid (VSS) growth mechanisms are widely used to obtain silicon nanowires. In this paper, we report on a hybrid method based on the use of a dual-phase catalyst made of liquid Sn and solid Cu 3 Si, which results in a liquid-assisted VSS (LA-VSS) mechanism. The silicon atoms are brought by atomic hydrogen-assisted dissociation of silane molecules. We observe the growth in situ, in the transmission electron microscope, at
- Published
- 2021
8. Tin reduction from fluorine doped tin oxide for silicon nanowire-based solar energy harvesting and storage
- Author
-
Lukas, Halagacka, primary, Zuzana, Gelnarova, additional, Mutaz, Al-Ghzaiwat, additional, Ileana, Florea, additional, Jiri, Hornicek, additional, Kamil, Postava, additional, and Martin, Foldyna, additional
- Published
- 2021
- Full Text
- View/download PDF
9. Plasma-Enhanced Chemical Vapor Deposition in a Transmission Electron Microscope?
- Author
-
Jean-Luc Maurice, Pavel Bulkin, Éric Ngo, Weixi Wang, Pere Roca i Cabarrocas, Martin Foldyna, and Ileana Florea
- Subjects
Instrumentation - Published
- 2021
10. Triple Radial Junction Hydrogenated Amorphous Silicon Solar Cells with >2 V Open‐Circuit Voltage
- Author
-
Chaoqi Wang, Martin Foldyna, Erik V. Johnson, and Pere Roca i Cabarrocas
- Subjects
Energy Engineering and Power Technology ,Electrical and Electronic Engineering ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials - Published
- 2022
11. Radial Junction Silicon Nanowire Solar Mini-Modules Grown on FTO/Glass Substrates
- Author
-
Martin Foldyna, Mutaz Al-Ghzaiwat, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and MIddle East University
- Subjects
010302 applied physics ,Resistive touchscreen ,Materials science ,Silicon ,business.industry ,Doping ,Energy conversion efficiency ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,021001 nanoscience & nanotechnology ,Tin oxide ,7. Clean energy ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,chemistry ,Plasma-enhanced chemical vapor deposition ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,0210 nano-technology ,Tin ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
In this work, we have demonstrated the radial junction silicon nanowire (RJ SiNW) solar mini-modules on 5×5 cm2 fluorine doped tin oxide(FTO)/soda-lime glass (SLG) substrates. The deposition of RJ SiNWs was performed in PECVD reactor using plasma-assisted VLS technique, with the assistance of laser scribing to ensure the monolithic integration of RJ SiNW solar cells on the same substrate. We have fabricated 3 batches of these solar mini-modules with printed top grid Ag contacts to improve the collection of carriers and the energy conversion efficiency (η) of these devices. With proper improvement in each batch after addressing the challenges we have faced, such as high resistive losses, we have obtained a high V oc of 5.52 V, I sc of 12.46 mA and FF of 63.56 %, leading to η of 4.37 % with the power generation of about 44 mW.
- Published
- 2021
12. Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contacts
- Author
-
Martin Foldyna, Tiphaine Mathieu-Pennober, Shan-Ting Zhang, François H. Julien, Nathanaelle Schneider, Maria Tchernycheva, Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)
- Subjects
Amorphous silicon ,Materials science ,Nanowire ,Bioengineering ,02 engineering and technology ,Chemical vapor deposition ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,law.invention ,[SPI.MAT]Engineering Sciences [physics]/Materials ,chemistry.chemical_compound ,law ,Solar cell ,General Materials Science ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Equivalent series resistance ,business.industry ,Mechanical Engineering ,Energy conversion efficiency ,General Chemistry ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,Mechanics of Materials ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,Charge carrier ,0210 nano-technology ,business ,Layer (electronics) - Abstract
International audience; Optoelectronic devices based on high aspect ratio nanowires bring new challenges for transparent electrodes, which can be well addressed by using hybrid structures. Here we demonstrate that a composite contact to radial junction nanowire solar cells made of a thin indium-tin oxide (ITO) layer and silver nanowires greatly improves the collection of charge carriers as compared to a single thick ITO layer by reducing the series resistance losses while improving the transparency. The optimization is performed on p-in solar cells comprising of dense non-vertical nanowires with a p-doped c-Si core and an ultra-thin a-Si:H absorption layer grown by plasma-enhanced chemical vapor deposition on glass substrates. The optimal hybrid contact developed in this work is demonstrated to increase the solar cell conversion efficiency from 4.3% to 6.6%.
- Published
- 2020
13. ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells
- Author
-
Nathanaelle Schneider, Frédérique Donsanti, Shan-Ting Zhang, Tiphaine Mathieu-Pennober, Damien Coutancier, Simone Bernardini, Olivier Fournier, Martin Foldyna, Maria Tchernycheva, Institut Photovoltaïque d’Ile-de-France (UMR) (IPVF), École polytechnique (X)-Ecole Nationale Supérieure de Chimie de Paris - Chimie ParisTech-PSL (ENSCP), Université Paris sciences et lettres (PSL)-Université Paris sciences et lettres (PSL)-TOTAL FINA ELF-EDF (EDF)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF)-Air Liquide [Siège Social], UFR des Sciences et Technologies, Université de La Réunion (UR), EDF (EDF), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Atomic layer deposition ,Crystallinity ,Etching (microfabrication) ,[CHIM]Chemical Sciences ,General Materials Science ,Thin film ,Metrics & More Article Recommendations atomic layer deposition ,QCM studies ,Transparent conducting film ,ZnO:Ti ,business.industry ,Quartz crystal microbalance ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Indium tin oxide ,chemistry ,TCO ,silicon nanowire solar cells ,Optoelectronics ,0210 nano-technology ,business ,Titanium ,n-type - Abstract
International audience; In the quest for the replacement of indium tin oxide (ITO), Ti-doped zinc oxide (TZO) films have been synthesized by atomic layer deposition (ALD) and applied as an n-type transparent conductive oxide (TCO). TZO thin films were obtained from titanium (IV) i-propoxide (TTIP), diethyl zinc, and water by introducing TiO 2 growth cycle in a ZnO matrix. Process parameters such as the order of precursor introduction, the cycle ratio, and the film thickness were optimized. The as-deposited films were analyzed for their surface morphology, elemental stoichiometry, optoelectronic properties, and crystallinity using a variety of characterization techniques. The growth mechanism was investigated for the first time by in situ quartz crystal microbalance measurements. It evidenced different insertion modes of titanium depending on the precursor introduction, as well as the etching of Zn−Et surface groups by TTIP. Resistivity as low as 1.2 × 10 −3 Ω cm and transmittance >80% in the visible range were obtained for 72-nm-thick films. Finally, the first application of ALD-TZO as TCO was reported. TZO films were successfully implemented as top electrodes in silicon nanowire solar cells. The unique properties of TZO combined with conformal coverage realized by the ALD technique make it possible for the cell to show almost flat external quantum efficiency (EQE) response, surpassing the bell-like EQE curve seen in devices with a sputtered ITO top electrode.
- Published
- 2020
14. Visualizing the effects of plasma-generated H atoms in situ in a transmission electron microscope
- Author
-
Jean-Luc Maurice, Pavel Bulkin, Éric Ngo, Weixi Wang, Martin Foldyna, Ileana Florea, Pere Roca i Cabarrocas, Romuald Béjaud, Olivier Hardouin Duparc, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Solides Irradiés (LSI), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Défauts, Désordre et Structuration de la Matière (DDSM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010), ANR-17-CE09-0011,HexaNW,Croissance vapeur-liquide-solide de nanofils de silicium de phase hexagonale diamant(2017), and LSI - Théorie de la science des matériaux (TSM)
- Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[CHIM.MATE]Chemical Sciences/Material chemistry ,Condensed Matter Physics ,Instrumentation ,Electronic, Optical and Magnetic Materials - Abstract
The radicals and atoms generated by a plasma have the effect, among others, of changing the surface energies of materials, which allows one to prepare nano-objects that would not stabilise in other conditions. This is the case of the Sn catalysed silicon nanowires (NWs) we present in this paper: without plasma, the liquid Sn at the top of NWs is unstable (because Sn naturally wets the Si) so that no growth is allowed, while in presence of the H atoms generated by the plasma, the balance of surface energies is drastically changed; the Sn droplet stabilises and can be used efficiently by the vapour-liquid-solid (VLS) mechanism of growth. Thus, if one wants to study the growth mechanisms of such NWs in situ in the transmission electron microscope (TEM), one has to adapt a plasma system on the TEM. This is precisely what was done at École polytechnique on the NanoMAX environmental TEM. The paper reports on the plasma effects, on the catalyst and on NW growth, recorded in situ in real time, at atomic resolution. The results are discussed in the light of density functional calculations of bare and hydrogenated Si surface energies.
- Published
- 2022
15. Optimization of the optical coupling in nanowire-based integrated photonic platforms by FDTD simulation
- Author
-
Martin Foldyna, Maria Tchernycheva, François H. Julien, D. V. Denisov, A. V. Babichev, Nan Guan, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), National Research University of Information Technologies, Mechanics and Optics [St. Petersburg] (ITMO), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and Saint Petersburg Electrotechnical University 'LETI'
- Subjects
visible light communication ,Materials science ,nanowire LED ,Nanowire ,General Physics and Astronomy ,Photodetector ,Physics::Optics ,02 engineering and technology ,lcsh:Chemical technology ,7. Clean energy ,01 natural sciences ,Waveguide (optics) ,lcsh:Technology ,Full Research Paper ,law.invention ,010309 optics ,law ,FDTD modeling ,0103 physical sciences ,Nanotechnology ,General Materials Science ,lcsh:TP1-1185 ,Electrical and Electronic Engineering ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,photonic integrated circuit ,lcsh:Science ,photonic platform ,ComputingMilieux_MISCELLANEOUS ,SiN/InGaN co-integration ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,business.industry ,lcsh:T ,Detector ,Photonic integrated circuit ,Finite-difference time-domain method ,nitride nanowires ,021001 nanoscience & nanotechnology ,lcsh:QC1-999 ,Nanoscience ,Optoelectronics ,lcsh:Q ,Photonics ,0210 nano-technology ,business ,lcsh:Physics ,Light-emitting diode - Abstract
The optimized design of a photonic platform based on a nanowire light emitting diode (LED) and a nanowire photodetector connected with a waveguide is proposed. The light coupling efficiency from the LED to the detector is optimized as a function of the geometrical parameters of the system using the finite difference time domain simulation tool Lumerical. Starting from a design reported in the literature with a coupling efficiency of only 8.7%, we propose an optimized photonic platform with efficiency reaching 65.5%.
- Published
- 2018
16. Nanostructured back reflectors produced using polystyrene assisted lithography for enhanced light trapping in silicon thin film solar cells
- Author
-
Wanghua Chen, Ari Bimo Prakoso, Pere Roca i Cabarrocas, Zeyu Li, Martin Foldyna, Junkang Wang, Chenjin Lu, E. Rusli, School of Electrical and Electronic Engineering, and Nanoelectronics Centre of Excellence
- Subjects
Amorphous silicon ,Materials science ,02 engineering and technology ,Trapping ,Chemical vapor deposition ,010402 general chemistry ,01 natural sciences ,law.invention ,chemistry.chemical_compound ,law ,Solar cell ,General Materials Science ,Lithography ,Light Trapping ,Renewable Energy, Sustainability and the Environment ,business.industry ,Energy conversion efficiency ,Silicon Thin Film ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,Electrical and electronic engineering [Engineering] ,Optoelectronics ,Polystyrene ,Current (fluid) ,0210 nano-technology ,business - Abstract
We study light trapping in hydrogenated amorphous silicon thin film solar cells fabricated by plasma-enhanced chemical vapor deposition on various nanostructured back reflectors. The back reflectors are patterned using polystyrene assisted lithography. We have investigated the correlation between the back reflector optical properties and the corresponding solar cell performance. We have introduced double size polystyrene sphere patterned back reflectors and have provided experimental evidence for improved light trapping performance compared to single size polystyrene sphere patterned back reflectors. We have achieved high performing nanostructured amorphous silicon solar cells with an initial power conversion efficiency of 7.53% and over 20% enhancement of the short-circuit current compared with the reference flat solar cell.
- Published
- 2018
17. In-situ Mueller matrix ellipsometry of silicon nanowires grown by plasma-enhanced vapor-liquid-solid method for radial junction solar cells
- Author
-
Jaromír Pištora, P. Roca i Cabarrocas, Martin Foldyna, Mutaz Al-Ghzaiwat, Z. Mrázková, Soumyadeep Misra, and Kamil Postava
- Subjects
Materials science ,Silicon ,technology, industry, and agriculture ,Analytical chemistry ,Nanowire ,General Physics and Astronomy ,chemistry.chemical_element ,02 engineering and technology ,Surfaces and Interfaces ,General Chemistry ,Plasma ,Chemical vapor deposition ,equipment and supplies ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,chemistry ,Ellipsometry ,Deposition (phase transition) ,Mueller calculus ,Vapor–liquid–solid method ,0210 nano-technology - Abstract
In-situ Mueller matrix spectroscopic ellipsometry was applied for monitoring the silicon nanowire growth by plasma-enhanced vapor-liquid-solid method. The technique is proposed as a real-time, non-destructive, and non-invasive characterization of the deposition process in a plasma-enhanced chemical vapor deposition reactor. The data have been taken by spectrally resolved Mueller matrix ellipsometer every 1 min during the 8–10 min long nanowire growth process. We have developed an easy-to-apply optical model to fit the experimental data, which enables to study the evolution of the parameters of the structure during initial stages of the growth. The first results provide information about the effective deposition rate determined from the linear increase of the deposited silicon volume with the deposition time.
- Published
- 2017
18. Room Temperature Growth of Silica Nanowires on Top of Ultrathin Si Nanowires Synthesized with Sn‐Cu Bimetallic Seeds
- Author
-
Ileana Florea, Eric Ngo, Jean-Luc Maurice, Pere Roca i Cabarrocas, Weixi Wang, Martin Foldyna, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), ANR-17-CE09-0011,HexaNW,Croissance vapeur-liquide-solide de nanofils de silicium de phase hexagonale diamant(2017), and ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010)
- Subjects
Materials science ,Nanowire ,02 engineering and technology ,Surfaces and Interfaces ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Chemical engineering ,Transmission electron microscopy ,Plasma-enhanced chemical vapor deposition ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Materials Chemistry ,Electrical and Electronic Engineering ,0210 nano-technology ,Silicon nanowires ,Bimetallic strip ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2021
19. Silicon Nanowire Solar Cells with μc‐Si:H Absorbers for Radial Junction Devices
- Author
-
Isabelle Maurin, Pere Roca i Cabarrocas, Jean-Paul Kleider, Thierry Gacoin, Alvarez José, Letian Dai, Martin Foldyna, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Génie électrique et électronique de Paris (GeePs), CentraleSupélec-Sorbonne Université (SU)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Matériaux, Rayonnements, Structure (MRS), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), and Laboratoire de physique de la matière condensée (LPMC)
- Subjects
Materials science ,02 engineering and technology ,7. Clean energy ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Plasma-enhanced chemical vapor deposition ,0103 physical sciences ,Materials Chemistry ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[INFO.INFO-BT]Computer Science [cs]/Biotechnology ,Electrical and Electronic Engineering ,Silicon nanowires ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,business.industry ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,Surfaces and Interfaces ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,0210 nano-technology ,business - Abstract
International audience
- Published
- 2021
20. Surface potential investigation on interdigitated back contact solar cells by Scanning Electron Microscopy and Kelvin Probe Force Microscopy: Effect of electrical bias
- Author
-
Vladimir Neplokh, C. Toccafondi, Patricia Prod'Homme, Valerio Piazza, Paul Narchi, Martin Foldyna, Maria Tchernycheva, Pere Roca i Cabarrocas, Twan Bearda, Fabien Bayle, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), IMEC (IMEC), Catholic University of Leuven - Katholieke Universiteit Leuven (KU Leuven), Laboratoire Hubert Curien [Saint Etienne] (LHC), Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS)-Institut d'Optique Graduate School (IOGS), Total New Energies, Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)-Université Paris-Saclay, and Institut d'Optique Graduate School (IOGS)-Université Jean Monnet [Saint-Étienne] (UJM)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
010302 applied physics ,Kelvin probe force microscope ,Materials science ,Renewable Energy, Sustainability and the Environment ,business.industry ,Atomic force acoustic microscopy ,Nanotechnology ,Scanning gate microscopy ,02 engineering and technology ,Scanning capacitance microscopy ,021001 nanoscience & nanotechnology ,01 natural sciences ,7. Clean energy ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Scanning probe microscopy ,Scanning voltage microscopy ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Scanning ion-conductance microscopy ,Optoelectronics ,0210 nano-technology ,business ,Non-contact atomic force microscopy ,ComputingMilieux_MISCELLANEOUS - Abstract
Both Kelvin Probe Force Microscopy and Scanning Electron Microscopy enable assessment of the effect of electrical bias on the surface potential of the layers of a solar cell. We report on a comprehensive comparison of surface potential measurements on an interdigitated back contact solar cell using these two techniques. Measurements under different values of electrical biases are performed on and between the metallic contacts. They show a good agreement between the surface potential obtained with Kelvin Probe Force Microscopy and the Scanning Electron Microscopy signal. In order to provide an accurate comparison, the scanned areas are adjacent to each other and accurate repositioning is achieved thanks to a nano-indentation between the contacts. We show that measurements under reverse bias are of interest to locate nano-defects and measurements under forward bias are relevant to identify local series resistance issues. We suggest that a setup combining Scanning Electron Microscopy and Kelvin Probe Force Microscopy under different values of the electrical bias should be valuable since the former is a high throughput technique enabling measurements on large scan areas, while the latter is a quantitative, low noise, and unintrusive local technique.
- Published
- 2017
21. Silicon nanowire solar cells with μc-Si:H absorbers for radial tandem devices
- Author
-
Letian Dai, Martin Foldyna, Isabelle Maurin, Alvarez, J., Weixi Wang, Eric Ngo, Jean-Paul Kleider, Jean-Luc Maurice, Thierry Gacoin, Cabarrocas, Pere Roca I. Cabarrocas Roca I., Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Laboratoire de Physique de la Matière Condensée (LPMC), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière condensée (LPMC), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and KLEIDER, Jean-Paul
- Subjects
[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,[SPI.MAT] Engineering Sciences [physics]/Materials ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,ComputingMilieux_MISCELLANEOUS ,[SPI.NRJ] Engineering Sciences [physics]/Electric power ,[SPI.MAT]Engineering Sciences [physics]/Materials - Abstract
International audience
- Published
- 2019
22. Low-cost high-efficiency system for solar-driven conversion of CO
- Author
-
Tran Ngoc, Huan, Daniel Alves, Dalla Corte, Sarah, Lamaison, Dilan, Karapinar, Lukas, Lutz, Nicolas, Menguy, Martin, Foldyna, Silver-Hamill, Turren-Cruz, Anders, Hagfeldt, Federico, Bella, Marc, Fontecave, and Victor, Mougel
- Subjects
Commentaries - Abstract
Conversion of carbon dioxide into hydrocarbons using solar energy is an attractive strategy for storing such a renewable source of energy into the form of chemical energy (a fuel). This can be achieved in a system coupling a photovoltaic (PV) cell to an electrochemical cell (EC) for CO
- Published
- 2019
23. Low-cost high-efficiency system for solar-driven conversion of CO 2 to hydrocarbons
- Author
-
Lukas Lutz, Anders Hagfeldt, Sarah Lamaison, Nicolas Menguy, Tran Ngoc Huan, Marc Fontecave, Daniel Alves Dalla Corte, Silver-Hamill Turren-Cruz, Dilan Karapinar, Victor Mougel, Martin Foldyna, Federico Bella, Collège de France - Chaire Chimie des processus biologiques, Laboratoire de Chimie des Processus Biologiques (LCPB), Collège de France (CdF (institution))-Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS)-Collège de France (CdF (institution))-Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Chimie du solide et de l'énergie (CSE), Collège de France (CdF (institution))-Institut de Chimie du CNRS (INC)-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Institut de minéralogie, de physique des matériaux et de cosmochimie (IMPMC), Muséum national d'Histoire naturelle (MNHN)-Institut de recherche pour le développement [IRD] : UR206-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratory of Photomolecular Science (LSPM), Ecole Polytechnique Fédérale de Lausanne (EPFL), and Chaire Chimie des processus biologiques
- Subjects
Electrocatalysis ,PV–EC ,CO2 reduction ,Electrolyzer ,Copper dendrites ,Materials science ,copper dendrites ,electrocatalysis ,electrolyzer ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,Electrochemical cell ,law.invention ,pv-ec ,law ,evolution ,ethylene ,[CHIM]Chemical Sciences ,Process engineering ,Multidisciplinary ,copper-oxide electrocatalyst ,catalysis ,business.industry ,Photovoltaic system ,021001 nanoscience & nanotechnology ,Solar energy ,electroreduction ,Cathode ,0104 chemical sciences ,Renewable energy ,Anode ,Chemical energy ,water oxidation ,13. Climate action ,cells ,0210 nano-technology ,business ,Efficient energy use - Abstract
Conversion of carbon dioxide into hydrocarbons using solar energy is an attractive strategy for storing such a renewable source of energy into the form of chemical energy (a fuel). This can be achieved in a system coupling a photovoltaic (PV) cell to an electrochemical cell (EC) for CO2 reduction. To be beneficial and applicable, such a system should use low-cost and easily processable photovoltaic cells and display minimal energy losses associated with the catalysts at the anode and cathode and with the electrolyzer device. In this work, we have considered all of these parameters altogether to set up a reference PV–EC system for CO2 reduction to hydrocarbons. By using the same original and efficient Cu-based catalysts at both electrodes of the electrolyzer, and by minimizing all possible energy losses associated with the electrolyzer device, we have achieved CO2 reduction to ethylene and ethane with a 21% energy efficiency. Coupled with a state-of-the-art, low-cost perovskite photovoltaic minimodule, this system reaches a 2.3% solar-to-hydrocarbon efficiency, setting a benchmark for an inexpensive all–earth-abundant PV–EC system. ISSN:0027-8424 ISSN:1091-6490
- Published
- 2019
24. Flexible Photodiodes Based on Nitride Core/Shell p–n Junction Nanowires
- Author
-
Xing Dai, Nan Guan, Eric Gautier, Fabienne Michelini, Valerio Piazza, Maria Tchernycheva, H. Zhang, Vladimir Neplokh, Joël Eymery, Agnes Messanvi, Marc Bescond, Nicolas Cavassilas, Martin Vallo, A. V. Babichev, Christophe Durand, Martin Foldyna, François H. Julien, Catherine Bougerol, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011), ANR-10-LABX-0035,Nano-Saclay,Paris-Saclay multidisciplinary Nano-Lab(2010), ANR-14-CE26-0020,PLATOFIL,PLAteforme phoTOnique à base de nanoFILs(2014), European Project: 639052,NanoHarvest, Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
- Subjects
Materials science ,Nanowire ,02 engineering and technology ,Nitride ,010402 general chemistry ,01 natural sciences ,[SPI.MAT]Engineering Sciences [physics]/Materials ,law.invention ,Responsivity ,law ,General Materials Science ,Quantum well ,InGaN ,business.industry ,Photoconductivity ,Detector ,flexible photodiode ,nitride nanowires ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Photodiode ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,self-powered photodetectors ,core/shell p−n junction ,0210 nano-technology ,business ,p–n junction ,Research Article - Abstract
International audience; A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane trans- ferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p−n junction nanowires containing InGaN/ GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2 detector patch was tested between 4 Hz and 2 kHz. The −3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.
- Published
- 2016
25. Modeling of Mueller Matrix Response from Diffracting Structures
- Author
-
Kamil Postava, Pere Roca i Cabarrocas, Tomáš Kohut, Martin Mičica, Martin Foldyna, Z. Mrázková, and Jaromír Pištora
- Subjects
Classical mechanics ,Materials science ,Biomedical Engineering ,General Materials Science ,Bioengineering ,General Chemistry ,Mueller calculus ,Condensed Matter Physics - Published
- 2016
26. Ultrathin PECVD epitaxial Si solar cells on glass via low-temperature transfer process
- Author
-
Martin Foldyna, Anne Gaucher, Philippe Pareige, Inès Massiot, Jean-Luc Maurice, Andrea Cattoni, Pere Roca i Cabarrocas, Emmanuel Cadel, Valerie Depauw, Gilles Patriarche, Stéphane Collin, Ismael Cosme-Bolanos, Wanghua Chen, and Romain Cariou
- Subjects
Materials science ,Silicon ,chemistry.chemical_element ,Nanotechnology ,02 engineering and technology ,Chemical vapor deposition ,010402 general chemistry ,Epitaxy ,7. Clean energy ,01 natural sciences ,Monocrystalline silicon ,Photovoltaics ,Plasma-enhanced chemical vapor deposition ,Crystalline silicon ,Electrical and Electronic Engineering ,Renewable Energy, Sustainability and the Environment ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,chemistry ,Anodic bonding ,Optoelectronics ,0210 nano-technology ,business - Abstract
Fabrication of high-quality ultrathin monocrystalline silicon layers and their transfer to low-cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low-temperature and low-cost process for ultrathin silicon solar cells. By using standard plasma-enhanced chemical vapor deposition (PECVD), we grow high-quality epitaxial silicon layers (epi-PECVD) from SiH4/H2 gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi-PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H-rich interface fragility, we demonstrate the transfer of large areas (∽10 cm2) ultrathin epi-PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd.
- Published
- 2016
27. Performance Analysis of AlxGa1-xAs/epi-Si(Ge) Tandem Solar Cells: A Simulation Study
- Author
-
Martin Foldyna, José Alvarez, Romain Cariou, P. Roca i Cabarrocas, Gwenaëlle Hamon, Jean-Paul Kleider, Jean Decobert, Raphaël Lachaume, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), and THALES-ALCATEL
- Subjects
Materials science ,Silicon ,chemistry.chemical_element ,02 engineering and technology ,Substrate (electronics) ,Quantum dot solar cell ,Epitaxy ,7. Clean energy ,01 natural sciences ,Polymer solar cell ,[SPI.MAT]Engineering Sciences [physics]/Materials ,law.invention ,Optics ,Energy(all) ,law ,Plasma-enhanced chemical vapor deposition ,0103 physical sciences ,Solar cell ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,silicon on III-V ,010302 applied physics ,Tandem ,business.industry ,III-V on silicon ,modeling ,simulation ,021001 nanoscience & nanotechnology ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,chemistry ,Optoelectronics ,tandem solar cells ,0210 nano-technology ,business - Abstract
International audience; A new strategy for the development of III-V/Si tandem solar cells has recently been proposed consisting in low temperature PECVD epitaxy of silicon or silicon-germanium on gallium-arsenide. This paper thus gives first insights about theoretical but realistic maximum performance of such tandem cells by means of full numerical simulations considering perfect layers and interfaces. The consequences of using a thin epi-Si bottom cell instead of a thick silicon substrate are investigated. In case no light trapping scheme is considered, a minimum epi-layer thickness of 20 μm is mandatory for the tandem to exhibit higher conversion efficiencies than a single GaAs solar cell. The epi-Si can yet be advantageously replaced by an epitaxial silicon-germanium alloy to increase the bottom cell optical absorption and thus decrease the minimum required thickness by a factor of ∼4 (∼5 μm). Finally, simulations show that over 33% efficiency can be obtained for AlxGa1-xAs/epi-Si0.63Ge0.27, which confirms that this is a promising new concept.
- Published
- 2015
- Full Text
- View/download PDF
28. Tin dioxide nanoparticles as catalyst precursors for plasma-assisted vapor–liquid–solid growth of silicon nanowires with well-controlled density
- Author
-
Martin Foldyna, Wanghua Chen, Hamza Mohsin, Thierry Gacoin, Isabelle Maurin, Weixi Wang, Jean-Paul Kleider, José Alvarez, Jean-Luc Maurice, Pere Roca i Cabarrocas, Letian Dai, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-CentraleSupélec-Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique de la Matière Condensée (LPMC), Sorbonne Université (SU)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique de la matière condensée (LPMC), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Nanoparticle ,chemistry.chemical_element ,Bioengineering ,02 engineering and technology ,Substrate (electronics) ,Chemical vapor deposition ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,chemistry.chemical_compound ,Deposition (phase transition) ,General Materials Science ,Electrical and Electronic Engineering ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,[PHYS]Physics [physics] ,Tin dioxide ,Mechanical Engineering ,General Chemistry ,[CHIM.MATE]Chemical Sciences/Material chemistry ,equipment and supplies ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,chemistry ,Chemical engineering ,Mechanics of Materials ,Particle ,0210 nano-technology ,Tin ,Layer (electronics) - Abstract
The fabrication of arrays of silicon nanowires (Si NWs) with well-defined surface coverage using the vapor-liquid-solid process requires a good control of the density and size distribution for the metal catalyst. We report on a cost-effective bottom-up approach to produce Si NWs by a low-temperature deposition technology using plasma-enhanced chemical vapor deposition and tin dioxide (SnO2) nanoparticles as the source of tin catalyst. This strategy offers a straightforward method to select specific particle sizes by conventional colloidal techniques, and to tune the surface coverage using a polyelectrolyte layer to efficiently immobilize the particles on the substrate by electrostatic grafting. After a further step of reduction into tin metal droplets using hydrogen plasma treatment, the catalyst particles are used for the growth of Si NWs. This approach allows the prodcution of controlled Si NWs arrays which can be used as a template for radial junction thin film solar cells.
- Published
- 2018
29. Optical Study and Experimental Realization of Nanostructured Back Reflectors with Reduced Parasitic Losses for Silicon Thin Film Solar Cells
- Author
-
Pavel Bulkin, Erik Johnson, Pere I Roca Cabarrocas, Zeyu Li, Martin Foldyna, E. Rusli, Chenjin Lu, Ari Bimo Prakoso, Rasha Khoury, Junkang Wang, Wanghua Chen, Nanayang Technological University (NTU), Nanayang Technological University, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), School of Electrical and Electronic Engineering, and Nanoelectronics Center of Excellence
- Subjects
Amorphous silicon ,Materials science ,animal structures ,Silicon ,genetic structures ,General Chemical Engineering ,chemistry.chemical_element ,02 engineering and technology ,Chemical vapor deposition ,7. Clean energy ,01 natural sciences ,Article ,lcsh:Chemistry ,chemistry.chemical_compound ,Photovoltaics ,polystyrene sphere assisted lithography ,0103 physical sciences ,nanostructured back reflectors ,General Materials Science ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,Lithography ,Light Trapping ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,Plasma etching ,silicon thin film ,business.industry ,Energy conversion efficiency ,technology, industry, and agriculture ,Silicon Thin Film ,021001 nanoscience & nanotechnology ,equipment and supplies ,photovoltaics ,chemistry ,lcsh:QD1-999 ,Engineering::Electrical and electronic engineering [DRNTU] ,Optoelectronics ,light trapping ,0210 nano-technology ,business ,Layer (electronics) - Abstract
We study light trapping and parasitic losses in hydrogenated amorphous silicon thin film solar cells fabricated by plasma-enhanced chemical vapor deposition on nanostructured back reflectors. The back reflectors are patterned using polystyrene assisted lithography. By using O2 plasma etching of the polystyrene spheres, we managed to fabricate hexagonal nanostructured back reflectors. With the help of rigorous modeling, we study the parasitic losses in different back reflectors, non-active layers, and last but not least the light enhancement effect in the silicon absorber layer. Moreover, simulation results have been checked against experimental data. We have demonstrated hexagonal nanostructured amorphous silicon thin film solar cells with a power conversion efficiency of 7.7% and around 34.7% enhancement of the short-circuit current density, compared with planar amorphous silicon thin film solar cells. Published version
- Published
- 2018
30. In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth
- Author
-
P. Roca i Cabarrocas, Martin Foldyna, Ronan Leal, Lukáš Halagačka, Institut Photovoltaïque d’Ile-de-France (ITE) (IPVF), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), TOTAL S.A., TOTAL FINA ELF, and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Silicon ,chemistry.chemical_element ,02 engineering and technology ,Chemical vapor deposition ,Substrate (electronics) ,Epitaxy ,01 natural sciences ,7. Clean energy ,Plasma-enhanced chemical vapor deposition ,0103 physical sciences ,Crystalline silicon ,Electrical and Electronic Engineering ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,010302 applied physics ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,business.industry ,Doping ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,chemistry ,Hardware and Architecture ,Optoelectronics ,0210 nano-technology ,business ,Layer (electronics) - Abstract
Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.
- Published
- 2018
31. Comments on 'Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy'
- Author
-
Martin Foldyna, Paul Narchi, Romain Cariou, Patricia Prod'Homme, Pere Roca i Cabarrocas, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), SYstèmes Moléculaires et nanoMatériaux pour l’Energie et la Santé (SYMMES), Institut de Chimie du CNRS (INC)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS), and Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG)
- Subjects
Nanostructure ,Materials science ,Silicon ,Analytical chemistry ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,7. Clean energy ,law.invention ,Monocrystalline silicon ,law ,Solar cell ,Microscopy ,Electrical and Electronic Engineering ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,ComputingMilieux_MISCELLANEOUS ,Kelvin probe force microscope ,business.industry ,Biasing ,Carrier lifetime ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,chemistry ,Optoelectronics ,0210 nano-technology ,business - Abstract
In recent years, there has been an increasing interest on the study of the complex interplay between the nanostructure and phototransport mechanism in many emerging photovoltaic technologies. Recently, Kelvin probe force microscopy has emerged as a powerful technique for probing photocarrier dynamics and gaining access to carrier lifetime at the nanoscale in a wide range of photovoltaic materials. In the paper entitled “Nanoscale investigation of carrier lifetime on the cross section of epitaxial silicon solar cells using Kelvin Probe Force Microscopy” by Narchi et al . ( IEEE J. Photovolt ., vol. 6, no. 6, pp. 1576–1580, Nov. 2016), an innovative method to asses minority carrier lifetime at the nanoscale using Kelvin probe force microscopy under frequency modulated electrical bias on the cross section of an epitaxial silicon solar cell was demonstrated. The purpose of this note is to complement the results obtained by Narchi et al ., by showing that two-dimensional images of the photocarrier dynamics of different photophysical processes can be obtained upon the implementation of a postacquisition data processing. In this note, we also discuss how this photocarrier dynamical images can be linked with the underlying physical processes that take place in the sample upon carrier injection.
- Published
- 2018
32. Optical properties and performance of pyramidal texture silicon heterojunction solar cells: Key role of vertex angles
- Author
-
Pere Roca i Cabarrocas, Igor Paul Sobkowicz, Martin Foldyna, Kamil Postava, Ileana Florea, Z. Mrázková, Jaromír Pištora, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, IT4Innovations - National Supercomputing Center [Ostrava], Technical University of Ostrava [Ostrava] (VSB), and Nanotechnology Centre - VSB‐Technical University of Ostrava
- Subjects
010302 applied physics ,[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,Materials science ,Renewable Energy, Sustainability and the Environment ,business.industry ,Vertex angle ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,0103 physical sciences ,Silicon heterojunction ,Key (cryptography) ,Optoelectronics ,Texture (crystalline) ,Electrical and Electronic Engineering ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2018
33. Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature
- Author
-
Zhang Song, Itaru Raifuku, Pere Roca i Cabarrocas, Martin Foldyna, Erik Johnson, Tiphaine Bourgeteau, Yasuaki Ishikawa, Yvan Bonnassieux, Yukiharu Uraoka, Nara Institute of Science and Technology - Graduate School of Information Science (NAIST), Nara Institute of Science and Technology, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X)
- Subjects
Diffraction ,Materials science ,Scanning electron microscope ,Nickel oxide ,Metals and Alloys ,Crystal growth ,02 engineering and technology ,Surfaces and Interfaces ,Substrate (electronics) ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,0104 chemical sciences ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Sputtering ,Materials Chemistry ,Perpendicular ,Composite material ,Thin film ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,0210 nano-technology ,ComputingMilieux_MISCELLANEOUS - Abstract
Structure and crystal growth of nickel oxide thin films (10–300 nm) prepared by low-temperature sputtering have been investigated by scanning electron microscopy (SEM), X-ray diffraction, and spectroscopic ellipsometry. Very thin films are compact and homogeneous and are made of almost randomly oriented crystals. A preferential growth direction is then observed following the (111), (220) and (311) planes to the detriment of the (222) and (200) planes, inducing a growth of the materials in columns perpendicularly to the substrate. An optical model able to account for this particular structure has been created from the spectroscopic ellipsometry measurements, and correlates well with the structure observed by SEM. Moreover, it enables an accurate estimation of the thickness without damage to the substrate.
- Published
- 2018
34. Molecular Beam Epitaxy of Germanium in the Atomic-Resolution Transmission Electron Microscope
- Author
-
Laurent Travers, Federico Panciera, Eric Ngo, Martin Foldyna, Jean-Christophe Harmand, Ileana Florea, Weixi Wang, Pere Roca i Cabarrocas, Jean-Luc Maurice, Maurice, Jean-Luc, Equipements d'excellence - Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay - - TEMPOS2010 - ANR-10-EQPX-0050 - EQPX - VALID, Croissance vapeur-liquide-solide de nanofils de silicium de phase hexagonale diamant - - HexaNW2017 - ANR-17-CE09-0011 - AAPG2017 - VALID, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies (C2N), Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), ANR-10-EQPX-0050,TEMPOS,Microscopie electronique en transmission sur le plateau Palaiseau Orsay Saclay(2010), ANR-17-CE09-0011,HexaNW,Croissance vapeur-liquide-solide de nanofils de silicium de phase hexagonale diamant(2017), Institut de Chimie et des Matériaux Paris-Est (ICMPE), Université Paris-Est Créteil Val-de-Marne - Paris 12 (UPEC UP12)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre de Nanosciences et de Nanotechnologies [Marcoussis] (C2N), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace, Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS)-Institut National de la Santé et de la Recherche Médicale (INSERM)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Université de Strasbourg (UNISTRA)-Réseau nanophotonique et optique, and Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Université de Strasbourg (UNISTRA)
- Subjects
010302 applied physics ,Materials science ,business.industry ,chemistry.chemical_element ,Germanium ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,chemistry ,Atomic resolution ,Transmission electron microscopy ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,0210 nano-technology ,business ,Instrumentation ,ComputingMilieux_MISCELLANEOUS ,Molecular beam epitaxy - Abstract
International audience
- Published
- 2019
35. Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires
- Author
-
Maria Tchernycheva, Martin Foldyna, Agnes Messanvi, Fabien Bayle, Christophe Durand, A. V. Babichev, Joël Eymery, François H. Julien, Vladimir Neplokh, H. Zhang, Catherine Bougerol, Eric Gautier, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Service de Physique des Matériaux et Microstructures (SP2M - UMR 9002), Institut Nanosciences et Cryogénie (INAC), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Nanophysique et Semiconducteurs (NEEL - NPSC), and Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)
- Subjects
[PHYS]Physics [physics] ,010302 applied physics ,Photocurrent ,Materials science ,business.industry ,Energy conversion efficiency ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,7. Clean energy ,Photovoltaics ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Sapphire ,Optoelectronics ,General Materials Science ,Metalorganic vapour phase epitaxy ,[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] ,0210 nano-technology ,Absorption (electromagnetic radiation) ,business ,ComputingMilieux_MISCELLANEOUS ,Quantum well - Abstract
We report the investigation of the photovoltaic properties of core-shell GaN/InGaN wires. The radial structure is grown on m-plane {11̅00} facets of self-assembled c̅-axis GaN wires elaborated by metal-organic vapor phase epitaxy (MOVPE) on sapphire substrates. The conversion efficiency of wires with radial shell composed of thick In0.1Ga0.9N layers and of 30× In0.18Ga0.82N/GaN quantum wells are compared. We also investigate the impact of the contact nature and layout on the carrier collection and photovoltaic performances. The contact optimization results in an improved conversion efficiency of 0.33% and a fill factor of 83% under 1 sun (AM1.5G) on single wires with a quantum well-based active region. Photocurrent spectroscopy demonstrates that the response ascribed to the absorption of InGaN/GaN quantum wells appears at wavelengths shorter than 440 nm.
- Published
- 2015
36. Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers
- Author
-
Takashi Itoh, Janis J. Merkel, Petr Klapetek, Andrea Mašková, Christiane Becker, Linwei Yu, Peter Pikna, Soumyadeep Misra, Jiří Vyskočil, Aliaksei Vetushka, Martin Ledinský, Matěj Hývl, Jan Kočka, Aleš Marek, Antonín Fejfar, Pere Roca i Cabarrocas, Zdeňka Hájková, Martin Foldyna, Institute of Physics of the Czech Academy of Sciences (FZU / CAS), Czech Academy of Sciences [Prague] (CAS), Czech Metrology Institute, Service d'étude en Géographie économique Fondamentale et Appliquée (SEGEFA), Université de Liège, Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Kawasaki Heavy Industries, Ltd [Tokyo], Kawasaki Heavy Industries, Ltd [Japon], Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Microscope ,Materials science ,Scanning electron microscope ,Nanowire ,02 engineering and technology ,01 natural sciences ,law.invention ,Optics ,Optical microscope ,law ,0103 physical sciences ,Thin film ,ComputingMilieux_MISCELLANEOUS ,[PHYS]Physics [physics] ,010302 applied physics ,Renewable Energy, Sustainability and the Environment ,business.industry ,Conductive atomic force microscopy ,Nanoindentation ,021001 nanoscience & nanotechnology ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Amorphous solid ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,0210 nano-technology ,business - Abstract
Radial junction solar cells with only ~100 nm thin amorphous Si absorber layer deposited on Si nanowires can be prepared by a relatively simple and low-cost thin film technology. Metal assisted Si nanowire growth leads to a disorder in nanowire orientations, lengths and shapes, which is then preserved by the conformal absorber layer. Interestingly, high conversion efficiencies are reached in spite of the disorder. In this contribution we describe microscopic methods aiming at exploring the role of structural disorder on the local electronic properties of radial junction cells. A method for locating the same nanostructure in different microscopes, using the nanoindentation marks for orientation on the sample, is described. Indents can be easily located by optical microscopy, scanning electron microscopes or scanning probe microscopes. Groups of three indents arranged in triangles can serve as coordinate systems for triangulation on samples, enabling correlative microscopy even in instruments which were not designed for it. This approach also enables localization of the same positions on samples after repeated mounting in various microscopes with a precision better than 50 nm. This is possible even on samples without any structural features, as demonstrated for flat silicon thin films prepared by solid phase crystallization, for which we have correlated crystallographic maps from electron backscattering diffraction and conductivity maps by atomic force microscopy. The technique allows observing the same locations before and after technological steps, as shown for the hot wire chemical vapor deposition of carbon nanowalls.
- Published
- 2015
37. Lifetime assessment in crystalline silicon: From nanopatterned wafer to ultra-thin crystalline films for solar cells
- Author
-
Ismael Cosme, P. Roca i Cabarrocas, Martin Foldyna, Wanghua Chen, Valerie Depauw, Christos Trompoukis, Romain Cariou, R. Boukhicha, and Ki-Dong Lee
- Subjects
Amorphous silicon ,Materials science ,Passivation ,Silicon ,Renewable Energy, Sustainability and the Environment ,business.industry ,chemistry.chemical_element ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,Monocrystalline silicon ,chemistry.chemical_compound ,chemistry ,Optoelectronics ,Wafer ,Crystalline silicon ,Dry etching ,Thin film ,business - Abstract
We have studied surface passivation on nanopatterned crystalline silicon (c-Si) wafers (280 µm), thin c-Si wafers (25 µm), ultrathin (~1–6 µm) low temperature epitaxial PECVD and epitaxy-free silicon. Nanopatterned front surfaces were produced by combining nanoimprint lithography with dry or wet etching. The impact of the nanopatterning on the effective lifetime is investigated by means of photoconductance and time-resolved microwave conductivity measurements. Passivation of flat ultra-thin monocrystalline layers by a-Si:H demonstrates effective lifetimes of a few µs. Flat, dry and wet etched c-Si wafers were also passivated by hydrogenated amorphous silicon, thus forming a heterojunction interface. The measured effective lifetimes were 2.2 ms for the flat, 484 μs for the dry and 709 μs for the wet etched wafers, respectively. It is noteworthy that despite the plasma damage associated with the dry etching process, the lifetime measured after passivation remains high enough for the targeted ultrathin solar cells. Solar cells fabricated on wafers nanopatterned via wet etching have reached an open circuit voltage as high as the flat sample thus demonstrating the potential of the use of wet etched nanopatterned surfaces for high efficiency solar cells.
- Published
- 2015
38. Radial Junction Architecture: A New Approach to Stable and Highly Efficient Silicon Thin Film Solar Cells
- Author
-
Martin Foldyna, Ileana Florea, P. Roca i Cabarrocas, Lianbo Yu, and Soumyadeep Misra
- Subjects
Amorphous silicon ,Materials science ,business.industry ,Band gap ,Photovoltaic system ,Quantum dot solar cell ,law.invention ,chemistry.chemical_compound ,Optics ,chemistry ,law ,Photovoltaics ,Solar cell ,Optoelectronics ,Plasmonic solar cell ,Thin film ,business - Abstract
Incorporation of properly designed nanostructures in solar cells improves light trapping and consequently their power conversion efficiencies. Due to its unique structure, a silicon nanowire (SiNW) matrix provides excellent light trapping and thus offers a promising approach for cost-effective, stable and efficient silicon thin film photovoltaics. Moreover, by decoupling the light absorption and carrier collection directions, radial junction solar cells built around the SiNWs allow the use of very thin active layers. As a matter of fact, radial PIN junctions with 9.2% power conversion efficiency have already been demonstrated on glass substrates with only 100 nm thick intrinsic hydrogenated amorphous silicon layers. The most straightforward way to further improve the short circuit current density is to use an active layer with a lower band gap. In this work, the performances of devices with two different low band gap materials, e.g., hydrogenated microcrystalline silicon (μc-Si:H) and hydrogenated amorphous silicon germanium alloy (a-SiGe:H) are presented. To the best of our knowledge, this is the first demonstration of a-SiGe:H radial junction solar cell.
- Published
- 2015
39. InGaN/GaN nanowire flexible light emitting diodes and photodetectors
- Author
-
François H. Julien, Nan Guan, Joël Eymery, Akanksha Kapoor, Lorenzo Mancini, Nicolas Cavassilas, H. Zhang, Maria Tchernycheva, Christophe Durand, Xing Dai, Catherine Bougerol, Martin Foldyna, Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Nanophysique et Semiconducteurs (NPSC), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Nanophysique et Semiconducteurs (NEEL - NPSC), Institut Néel (NEEL), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Nanostructures et Rayonnement Synchrotron (NRS ), Modélisation et Exploration des Matériaux (MEM), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
- Subjects
010302 applied physics ,Materials science ,Fabrication ,business.industry ,Nanowire ,Photodetector ,02 engineering and technology ,Nitride ,021001 nanoscience & nanotechnology ,01 natural sciences ,7. Clean energy ,Photodiode ,law.invention ,law ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,Quantum efficiency ,0210 nano-technology ,business ,ComputingMilieux_MISCELLANEOUS ,Diode ,Light-emitting diode - Abstract
In this paper, we present our recent progress towards flexible nitride nanowire devices: we propose a method to combine high flexibility of polymer films with high quantum efficiency provided by nitride nanowires. The lift-off and transfer procedure allows to assemble free-standing layers of nanowire materials with different bandgaps without any constraint related to lattice-matching or growth condition compatibility. Following this method, we demonstrate blue, green, two-colour and white light emitting diodes as well as p-n photodiodes for integrable UVA sensors.
- Published
- 2017
40. A Solar Cell Architecture for Enhancing Performance While Reducing Absorber Thickness and Back Contact Requirements
- Author
-
Martin Foldyna, Stephen J. Fonash, Pere Roca i Cabarrocas, Mutaz Al-Ghzaiwat, Wook Jun Nam, Jean-Christophe Dornstetter, Pennsylvania State University (Penn State), Penn State System, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Materials science ,Photodetector ,Context (language use) ,02 engineering and technology ,7. Clean energy ,01 natural sciences ,law.invention ,010309 optics ,Optics ,Planar ,law ,0103 physical sciences ,Solar cell ,Electrical and Electronic Engineering ,Thin film ,ComputingMilieux_MISCELLANEOUS ,business.industry ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Electronic, Optical and Magnetic Materials ,Absorptance ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Optoelectronics ,Quantum efficiency ,0210 nano-technology ,business ,Current density - Abstract
A top-surface, micron-scale, protrusion array following unique light management design criteria is presented and demonstrated. Modeling results for absorptance A ( λ ) and short-circuit current density J sc along with experimental results for external quantum efficiency and J sc all confirm the advantages achievable for solar cells and photodetectors. While the full modeling utilizes a Maxwell's equation solver, a simplified photon momentum picture is used in the design discussion. As a result of this design 1) less absorber material is required, 2) improved performance over planar top-surface devices is attained with conventional silver (Ag) back reflector/electrodes (BR/Es), 3) importantly employing an Ag-less transparent conductive material on aluminum (Al) BR/E in place of Ag BR/Es leads to even better performance, and 4) counterintuitively performance comparable to cells with Ag BR/Es is attained when a completely metal-less BR/E is employed. The results presented show modeled J sc values of 30.8 mA/cm2 for a 400 nm nc-Si absorber and measured J sc values of 22.8 mA/cm2 for 700 nm nc-Si absorber. These results are couched in the context of thin film devices but the design will yield performance enhancement, material savings, and back contact opportunities in any situation where incoming light reaches the BR/E in the corresponding planar control.
- Published
- 2017
41. Natural occurrence of the diamond hexagonal structure in silicon nanowires grown by a plasma-assisted vapour-liquid-solid method
- Author
-
Lianbo Yu, Erik Johnson, Jean-Luc Maurice, Wanghua Chen, Ileana Florea, J. Tang, P. Roca i Cabarrocas, Frédéric Fossard, Martin Foldyna, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'étude des microstructures [Châtillon] (LEM - ONERA - CNRS), Centre National de la Recherche Scientifique (CNRS)-ONERA, School of Electronics Engineering and Computer Science [Beijing] (EECS), and Peking University [Beijing]
- Subjects
Materials science ,Nanowire ,chemistry.chemical_element ,02 engineering and technology ,Crystal structure ,engineering.material ,01 natural sciences ,NANOFILS ,Metastability ,Phase (matter) ,0103 physical sciences ,General Materials Science ,010306 general physics ,PLASMA ,Zone axis ,Diamond ,[CHIM.MATE]Chemical Sciences/Material chemistry ,021001 nanoscience & nanotechnology ,Crystallography ,Chemical engineering ,chemistry ,Transmission electron microscopy ,SILICIUM ,engineering ,0210 nano-technology ,Tin - Abstract
International audience; Silicon nanowires have been grown by a plasma-assisted vapour–liquid–solid method using tin as the catalyst. Transmission electron microscopy in the [1-210] zone axis shows that the diamond hexagonal (P63/mmc) crystal structure is present in several nanowires. This is the first unambiguous proof of the natural occurrence of this metastable phase to our knowledge.
- Published
- 2017
42. Notice of Removal Nanoscale investigation of carrier lifetime on the cross-section of epitaxial silicon solar cells using Kelvin probe force microscopy
- Author
-
Pere Roca i Cabarrocas, Romain Cariou, Martin Foldyna, Paul Narchi, and Patricia Prod'Homme
- Subjects
Kelvin probe force microscope ,Cross section (physics) ,Materials science ,business.industry ,Microscopy ,Optoelectronics ,Epitaxial silicon ,Carrier lifetime ,business ,Nanoscopic scale - Published
- 2017
43. First Demonstration of Radial Junction Silicon Nanowire Solar Mini-Modules Prepared by PECVD and Laser Scribing
- Author
-
Mutaz Al-Ghzaiwat, Erik Johnson, Wanghua Chen, Martin Foldyna, Pere Roca i Cabarrocas, Jacques Meot, and Takashi Fuyuki
- Subjects
Materials science ,Equivalent series resistance ,business.industry ,Plasma-enhanced chemical vapor deposition ,Optoelectronics ,Chemical vapor deposition ,Solar simulator ,Electroluminescence ,business ,Silicon nanowires ,Laser scribing - Abstract
Based on recent advancements of radial junction silicon nanowire (RJ SiNWs) solar cells, a demonstration of $5\mathrm{x}5 \pmb{\mathrm{cm}^{2}}$ RJ $\mathbf{SiNW}$ solar mini-module is presented in this work. The $\mathbf{SiNW}$ devices were grown by plasma-assisted vapor-liquid-solid technique at low temperature in a plasma-enhanced chemical vapor deposition reactor. The $\pmb{5\mathrm{x}5\ \mathrm{cm}^{2}}$ mini-modules have been obtained using a commercial laser scribing apparatus. The laser scribing insures a monolithic integration of electrically separated cells. We have obtained a power generation of 10 $\mathbf{mW}$ from 5 individual cells of total active area of 8.6 $\pmb{\mathrm{cm}^{2}}$. The mini-module has an open-circuit voltage of 3.85 V. The performance was evaluated using solar simulator and short comings (high series resistance) were analyzed using a home-made electroluminescence setup.
- Published
- 2017
44. Inverse Metamorphic III-V/epi-SiGe Tandem Solar Cell Performance Assessed by Optical and Electrical Modeling
- Author
-
Pere Roca i Cabarrocas, Raphael Lachaurne, Jean Decobert, Gwenaëlle Hamon, Jean-Paul Kleider, Romain Cariou, Nicolas Vaissiere, José Alvarez, Martin Foldyna, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, ANR-13-PRGE-0009,IMPETUS,Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire(2013), THALES [France]-ALCATEL, KLEIDER, Jean-Paul, and Production Renouvelable et Gestion de l'Electricité - Multi-jonctions innovantes combinant MOVPE et épitaxie à basse température pour le solaire - - IMPETUS2013 - ANR-13-PRGE-0009 - PROGELEC - VALID
- Subjects
Materials science ,[SPI.OPTI] Engineering Sciences [physics]/Optics / Photonic ,Silicon ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,020209 energy ,chemistry.chemical_element ,Inverse ,02 engineering and technology ,[SPI.MAT] Engineering Sciences [physics]/Materials ,Grating ,7. Clean energy ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Sputtering ,0202 electrical engineering, electronic engineering, information engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS ,Tandem ,Computer simulation ,business.industry ,[SPI.NRJ]Engineering Sciences [physics]/Electric power ,021001 nanoscience & nanotechnology ,Microstructure ,[PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,chemistry ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,Optoelectronics ,0210 nano-technology ,business ,[SPI.NRJ] Engineering Sciences [physics]/Electric power ,Tandem solar cell - Abstract
Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. We here propose to evaluate such tandem concept based on inverse metamorphic growth of c-Si(Ge) on GaAs by means of numerical simulation. Electrical and optical models are first faced to experimental realizations of single junction cells to calibrate material parameters and to assess the electrical quality of the epi-SiGe layer. Then the tandem structure is optimized, current matching conditions are given and the benefit of using a 2D grating at the back-side is studied.
- Published
- 2017
45. Tuning the properties of F:SnO 2 (FTO) nanocomposites with S:TiO 2 nanoparticles – promising hazy transparent electrodes for photovoltaics applications
- Author
-
Jean-Luc Deschanvres, Hervé Roussel, Carmen Jiménez, Lukas Schmidt-Mende, Shan-Ting Zhang, David Muñoz-Rojas, Etienne Pernot, Daniel Bellet, Vincent Consonni, Martin Foldyna, Laetitia Rapenne, Laboratoire des matériaux et du génie physique (LMGP ), Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Laboratoire réactivité et chimie des solides - UMR CNRS 7314 (LRCS), and Université de Picardie Jules Verne (UPJV)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)
- Subjects
010302 applied physics ,Materials science ,Nanocomposite ,business.industry ,Nanoparticle ,Nanotechnology ,02 engineering and technology ,General Chemistry ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,7. Clean energy ,Photovoltaics ,0103 physical sciences ,Electrode ,Materials Chemistry ,nanocomposites ,nanoparticles, photovoltaics ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,ddc:530 ,Texture (crystalline) ,0210 nano-technology ,business ,Sheet resistance ,ComputingMilieux_MISCELLANEOUS ,Transparent conducting film - Abstract
The appropriate choice of nanoparticles is proved to be essential in tuning the properties of F:SnO2 (FTO) nanocomposites. With the use of more conductive sulphur-doped TiO2 (S:TiO2) nanoparticles, the sheet resistance of S:TiO2–FTO nanocomposites is successfully reduced down to 38% as compared to the standard flat FTO (11.7 Ω sq-1), while the haze factor of the S:TiO2–FTO nanocomposites can be varied from almost zero (reference flat FTO) up to 60%; moreover the majority of 〈110〉 oriented S:TiO2 nanoparticles leads to a strong (110) texture in the resulting S:TiO2–FTO nanocomposites by local epitaxy. Careful morphology analyses and angle-resolved measurements reveal that the haze factor is proportional to the total surface coverage of the S:TiO2 nanoparticle agglomerates, while the feature size of the agglomerates determines the angular distribution of the scattered light – this is confirmed by an angle-resolved Mueller matrix polarimeter which allows obtaining the optical microscopic and angleresolved images of the exact same textured region. Our work establishes the guidelines to fabricate FTO and other transparent conductive oxide (TCO) nanocomposites as promising electrodes in solar cells with tunable structural, electrical, and optical properties. published
- Published
- 2017
46. Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells
- Author
-
Enric Garcia Caurel, Patricia Prod'Homme, Alexandre Dmitriev, Aline Herman, Martin Foldyna, Olivier Deparis, Emmanuel Drouard, Ounsi El Daif, Pere Roca i Cabarrocas, Christian Seassal, Inès Massiot, Kristof Lodewijks, Vladimir Mijkovic, Jef Poortmans, Alexandre Mayer, Jia Liu, Ivan Gordon, Robert Mertens, Valerie Depauw, Babak Heidari, Ismael Cosme, G. Poulain, Islam Abdo, Jérôme Muller, Loïc Lalouat, Regis Orobtchouk, Ki-Dong Lee, Wanghua Chen, Christos Trompoukis, Fabien Mandorlo, and Romain Cariou
- Subjects
Materials science ,Silicon ,chemistry.chemical_element ,02 engineering and technology ,01 natural sciences ,7. Clean energy ,law.invention ,law ,Etching (microfabrication) ,0103 physical sciences ,Solar cell ,Materials Chemistry ,Crystalline silicon ,Electrical and Electronic Engineering ,Thin film ,Photonic crystal ,010302 applied physics ,business.industry ,Surfaces and Interfaces ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,chemistry ,Optoelectronics ,Dry etching ,Photonics ,0210 nano-technology ,business - Abstract
We report on the fabrication, integration, and simulation, both optical and optoelectrical, of two-dimensional photonic nanostructures for advanced light trapping in thin crystalline silicon (c-Si) solar cells. The photonic nanostructures are fabricated by the combination of various lithography (nanoimprint, laser interference, and hole mask colloidal) and etching (dry plasma and wet chemical) techniques. The nanopatterning possibilities thus range from periodic to random corrugations and from inverted nanopyramids to high aspect ratio profiles. Optically, the nanopatterning results in better performance than the standard pyramid texturing, showing a more robust behavior with respect to light incidence angle. Electrically, wet etching results in higher minority carrier lifetimes compared to dry etching. From the integration of the photonic nanostructures into a micron-thin c-Si solar cell certain factors limiting the efficiencies are identified. More precisely: (a) the parasitic absorption is limiting the short circuit current, (b) the conformality of thin-film coatings on the nanopatterned surface is limiting the fill factor, and (c) the material damage from dry etching is limiting the open circuit voltage. From optical simulations, the optimal pattern parameters are identified. From optoelectrical simulations, cell design considerations are discussed, suggesting to position the junction on the opposite side of the nanopattern.
- Published
- 2014
47. TEM characterisation of diamond-hexagonal silicon nanowires
- Author
-
Jean-Luc Maurice, Jian Tang, Ileana Florea, Frédéric Fossard, Pere Roca i Cabarrocas, Erik V. Johnson, and Martin Foldyna
- Published
- 2016
48. Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes
- Author
-
Raphaël Lachaume, Martin Foldyna, José Alvarez, Jean Decobert, Gwenaëlle Hamon, Jean-Paul Kleider, Romain Cariou, P. Roca i Cabarrocas, Laboratoire Génie électrique et électronique de Paris (GeePs), Université Paris-Sud - Paris 11 (UP11)-Université Pierre et Marie Curie - Paris 6 (UPMC)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Total New Energies, Alcatel-Thalès III-V lab (III-V Lab), THALES [France]-ALCATEL, Centre National de la Recherche Scientifique (CNRS)-CentraleSupélec-Université Pierre et Marie Curie - Paris 6 (UPMC)-Université Paris-Sud - Paris 11 (UP11), Centre National de la Recherche Scientifique (CNRS)-École polytechnique (X), and THALES-ALCATEL
- Subjects
Light trapping ,Materials science ,Silicon ,Opto-electrical modeling ,chemistry.chemical_element ,Reflector (antenna) ,02 engineering and technology ,Grating ,01 natural sciences ,7. Clean energy ,[SPI.MAT]Engineering Sciences [physics]/Materials ,Optics ,Epitaxial silicon germanium ,0103 physical sciences ,Texture (crystalline) ,Thin film ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Absorption (electromagnetic radiation) ,010302 applied physics ,TCAD ,Tandem ,Renewable Energy, Sustainability and the Environment ,business.industry ,Open-circuit voltage ,Tandem solar cells ,III-V on silicon ,021001 nanoscience & nanotechnology ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,chemistry ,Optoelectronics ,0210 nano-technology ,business ,RCWA - Abstract
International audience; Recent developments have unlocked the main issues arising from the combination of III-V and silicon and have opened a new way to fabricate tandem solar cells. In this study we provide a detailed analysis of III-V/epi-SiGe tandem devices performance using opto-electrical models and parameters acquired from previous experimental realizations of single junction devices. At first, we present the validation of our top and bottom cells models by comparison with previously published solar cells. The analysis of the current matching and the impact of the Al content in AlGaAs absorber on the open circuit voltage is performed on a very wide range of thickness and Al content. The optimal configurations for tandems with thin film absorbers are found with an empirical expression. This expression relates the required bottom absorber thickness to the Al content for current matching in a flat tandem device. Low-temperature epitaxial SiGe growth on III-V materials is an inverted growth technique, meaning that the last material grown is the Si(Ge) bottom cell. We can thus easily texture the back of the bottom cell for higher photon absorption. The proposed nanostructurization of the back reflector shows that, to reach the same efficiency, only half of the thickness is required if a 2D grating is combined with a silver reflector. The detailed influence of the bulk and interface electrical quality in the epi-SiGe bottom cell is also assessed. Finally, the prediction of the tandem device performance according to different realistic scenarios is presented.
- Published
- 2016
49. Nanoscale Investigation of Carrier Lifetime on the Cross Section of Epitaxial Silicon Solar Cells Using Kelvin Probe Force Microscopy
- Author
-
Paul Narchi, Romain Cariou, Martin Foldyna, Patricia Prodhomme, Pere Roca i Cabarrocas, Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), TOTAL S.A., and TOTAL FINA ELF
- Subjects
010302 applied physics ,0103 physical sciences ,[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] ,Electrical and Electronic Engineering ,010402 general chemistry ,Condensed Matter Physics ,01 natural sciences ,ComputingMilieux_MISCELLANEOUS ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials - Abstract
International audience
- Published
- 2016
50. High efficiency and stable hydrogenated amorphous silicon radial junction solar cells built on VLS-grown silicon nanowires
- Author
-
Martin Foldyna, Pere Roca i Cabarrocas, Linwei Yu, and Soumyadeep Misra
- Subjects
Amorphous silicon ,Materials science ,Renewable Energy, Sustainability and the Environment ,business.industry ,Open-circuit voltage ,Quantum dot solar cell ,Polymer solar cell ,Surfaces, Coatings and Films ,Electronic, Optical and Magnetic Materials ,law.invention ,Monocrystalline silicon ,chemistry.chemical_compound ,chemistry ,law ,Solar cell ,Optoelectronics ,Plasmonic solar cell ,business ,Short circuit - Abstract
Hydrogenated amorphous silicon (a-Si:H) radial junction solar cells, built over a dense matrix of Si nanowires (SiNWs), benefit from strong light trapping. This allows the use of a very thin absorber layer without sacrificing the solar cell performance, while improving its stability. By optimizing the density of SiNWs grown via a plasma-assisted vapor–liquid–solid process on glass, we have achieved radial junction a-Si:H solar cells with an open circuit voltage of 0.80 V, short circuit current density of 16.1 mA/cm 2 and a high power conversion efficiency of 8.14%. Furthermore, we present experimental evidence of the excellent stability of such radial junction a-Si:H solar cells with a light-induced degradation of only ~6%, compared to the typical degradation of 15% to 20% in planar cells. These results indicate the feasible and promising approach towards a new generation of stable and high performance a-Si:H thin film solar cells.
- Published
- 2013
Catalog
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.