Back to Search
Start Over
Ultrathin PECVD epitaxial Si solar cells on glass via low-temperature transfer process
- Source :
- Progress in Photovoltaics: Research and Applications. 24:1075-1084
- Publication Year :
- 2016
- Publisher :
- Wiley, 2016.
-
Abstract
- Fabrication of high-quality ultrathin monocrystalline silicon layers and their transfer to low-cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low-temperature and low-cost process for ultrathin silicon solar cells. By using standard plasma-enhanced chemical vapor deposition (PECVD), we grow high-quality epitaxial silicon layers (epi-PECVD) from SiH4/H2 gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi-PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H-rich interface fragility, we demonstrate the transfer of large areas (∽10 cm2) ultrathin epi-PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd.
- Subjects :
- Materials science
Silicon
chemistry.chemical_element
Nanotechnology
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
Epitaxy
7. Clean energy
01 natural sciences
Monocrystalline silicon
Photovoltaics
Plasma-enhanced chemical vapor deposition
Crystalline silicon
Electrical and Electronic Engineering
Renewable Energy, Sustainability and the Environment
business.industry
021001 nanoscience & nanotechnology
Condensed Matter Physics
0104 chemical sciences
Electronic, Optical and Magnetic Materials
chemistry
Anodic bonding
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 10627995
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Progress in Photovoltaics: Research and Applications
- Accession number :
- edsair.doi...........7b9c070b65dddecfb785a940b707c4c7