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InGaN/GaN nanowire flexible light emitting diodes and photodetectors
- Source :
- 2017 19th International Conference on Transparent Optical Networks (ICTON), 2017 19th International Conference on Transparent Optical Networks (ICTON), Jul 2017, Girona, Spain. ⟨10.1109/ICTON.2017.8024808⟩, ICTON
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- In this paper, we present our recent progress towards flexible nitride nanowire devices: we propose a method to combine high flexibility of polymer films with high quantum efficiency provided by nitride nanowires. The lift-off and transfer procedure allows to assemble free-standing layers of nanowire materials with different bandgaps without any constraint related to lattice-matching or growth condition compatibility. Following this method, we demonstrate blue, green, two-colour and white light emitting diodes as well as p-n photodiodes for integrable UVA sensors.
- Subjects :
- 010302 applied physics
Materials science
Fabrication
business.industry
Nanowire
Photodetector
02 engineering and technology
Nitride
021001 nanoscience & nanotechnology
01 natural sciences
7. Clean energy
Photodiode
law.invention
law
0103 physical sciences
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Optoelectronics
Quantum efficiency
0210 nano-technology
business
ComputingMilieux_MISCELLANEOUS
Diode
Light-emitting diode
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2017 19th International Conference on Transparent Optical Networks (ICTON), 2017 19th International Conference on Transparent Optical Networks (ICTON), Jul 2017, Girona, Spain. ⟨10.1109/ICTON.2017.8024808⟩, ICTON
- Accession number :
- edsair.doi.dedup.....1d03c974fa3b75ab9a7b45f0f6cb49cb