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Improvement of carrier collection in Si/a-Si:H nanowire solar cells by using hybrid ITO/silver nanowires contacts
- Source :
- Nanotechnology, Nanotechnology, Institute of Physics, 2020, 31 (43), pp.435408. ⟨10.1088/1361-6528/aba4ce⟩
- Publication Year :
- 2020
- Publisher :
- HAL CCSD, 2020.
-
Abstract
- International audience; Optoelectronic devices based on high aspect ratio nanowires bring new challenges for transparent electrodes, which can be well addressed by using hybrid structures. Here we demonstrate that a composite contact to radial junction nanowire solar cells made of a thin indium-tin oxide (ITO) layer and silver nanowires greatly improves the collection of charge carriers as compared to a single thick ITO layer by reducing the series resistance losses while improving the transparency. The optimization is performed on p-in solar cells comprising of dense non-vertical nanowires with a p-doped c-Si core and an ultra-thin a-Si:H absorption layer grown by plasma-enhanced chemical vapor deposition on glass substrates. The optimal hybrid contact developed in this work is demonstrated to increase the solar cell conversion efficiency from 4.3% to 6.6%.
- Subjects :
- Amorphous silicon
Materials science
Nanowire
Bioengineering
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
01 natural sciences
7. Clean energy
law.invention
[SPI.MAT]Engineering Sciences [physics]/Materials
chemistry.chemical_compound
law
Solar cell
General Materials Science
Electrical and Electronic Engineering
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
Equivalent series resistance
business.industry
Mechanical Engineering
Energy conversion efficiency
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
chemistry
Mechanics of Materials
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
Charge carrier
0210 nano-technology
business
Layer (electronics)
Subjects
Details
- Language :
- English
- ISSN :
- 09574484 and 13616528
- Database :
- OpenAIRE
- Journal :
- Nanotechnology, Nanotechnology, Institute of Physics, 2020, 31 (43), pp.435408. ⟨10.1088/1361-6528/aba4ce⟩
- Accession number :
- edsair.doi.dedup.....f8d2d9ac03336e0d191be033ffe1fc9a